IRF7406TRPBF

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IRF7406TRPBF

+BOM

MOSFET P-CH 30V 5.8A 8SO

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Last Time Buy
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5.8A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 45mOhm @ 2.8A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 59 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1100 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

개요

Description

The IRF7406TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications requiring efficient power management and switching capabilities. It belongs to the HEXFET® Power MOSFET family, known for high-speed switching and robust performance. This specific model is an N-channel MOSFET, which means it conducts when a positive voltage is applied to its gate terminal relative to its source terminal.
Key features of the IRF7406TRPBF include a low on-resistance, which minimizes power loss and enhances efficiency, and fast switching speeds, which are crucial for high-frequency applications. It typically handles moderate power levels, making it suitable for applications such as DC-DC converters, motor drives, and load switches.
The "TRPBF" suffix indicates that the device is packaged in a tape and reel format for automated assembly processes and is RoHS compliant, meaning it is free of hazardous substances. This MOSFET is often used in consumer electronics, automotive systems, and industrial equipment for reliable performance in power management tasks.

Equivalent

The IRF7406TRPBF is a MOSFET with specific characteristics. Equivalent products with similar specifications might include the NXP BUK9Y12-40E, Vishay SI4435DDY, and ON Semiconductor NTD4963N. Always verify the electrical characteristics and pin configuration before substituting to ensure compatibility with your application.

Features

The IRF7406TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed for high-efficiency power management and switching applications. It features an N-channel with a maximum voltage rating of 30V and a continuous current of 5.2A. The device is known for its low on-resistance, approximately 0.016 ohms, which enhances conduction efficiency and minimizes power loss.
This MOSFET operates effectively in a wide temperature range and is housed in a compact SOT-23 package, making it suitable for space-constrained applications. It is optimized for fast switching speeds, contributing to enhanced performance in power conversion circuits. The IRF7406TRPBF is also RoHS compliant, reflecting its adherence to environmental standards.
Typical applications include DC-DC converters, power management in portable electronics, and other systems where efficient load switching is critical. The combination of low on-resistance, high-speed performance, and small package size makes the IRF7406TRPBF an attractive choice for designers seeking reliable and efficient power solutions.

Pinout

The IRF7406TRPBF is a MOSFET transistor, specifically an N-channel MOSFET. It is typically packaged in a surface-mount configuration. The pin count and functions depend on the specific package type. Commonly, for a typical SO-8 package, it would have 8 pins. Here’s a brief outline of the pin functions:
1. Drain (D): Connects to the source of current that the transistor controls.
2. Gate (G): Controls the transistor's on/off state by receiving voltage to activate it.
3. Source (S): Connects to the ground or load, depending on the circuit configuration.
For more precise details, including the exact pinout, it's recommended to consult the datasheet of the IRF7406TRPBF from the manufacturer or authorized distributor. This document provides comprehensive electrical characteristics and pin configuration based on package style.

Manufacturer

The IRF7406TRPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company specializes in power systems, automotive solutions, industrial electronics, and security solutions. Infineon's product portfolio includes microcontrollers, sensors, power semiconductors, and security ICs, among other electronic components.
As a significant player in the semiconductor industry, Infineon Technologies is known for its innovations in power efficiency, mobility, and security, which are key drivers in various high-growth markets such as electric vehicles, renewable energy, and IoT (Internet of Things) applications. The company emphasizes sustainability and energy efficiency, and its solutions are integral to advancing technologies in automotive, industrial, and consumer electronics sectors. Infineon's commitment to research and development positions it as a key contributor to technological advancements globally.

Application

The IRF7406TRPBF is a power MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficiently manage power in converters and inverters.
2. Motor Control: Used in driving motors in industrial and consumer applications.
3. DC-DC Converters: Enhance performance in voltage regulation circuits.
4. Load Switches: Control power distribution in electronic devices.
5. Battery-Powered Applications: Improve battery life by efficient power management.
6. Automotive Systems: Applicable in electronic control units and other vehicular electronics.
7. Telecommunications: Useful in managing power in network devices and infrastructures.
Its low on-resistance and fast switching speed make it suitable for high-efficiency power management systems.

Package

The IRF7406TRPBF is packaged in a Surface-Mount Device (SMD) configuration, specifically designed in the SO-8 package type. This package is commonly used for small footprint applications on printed circuit boards (PCBs), offering ease of assembly and reliable performance in compact electronic designs.

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