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IRF7456TRPBF
+BOMMOSFET N-CH 20V 16A 8SO
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7456TRPBF
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데이터시트 IRF7456TRPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.8V, 10V |
| RdsOn(Max)@IdVgs | 6.5mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 3640 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
The IRF7456TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power conversion. Manufactured by Infineon Technologies, it offers a low on-resistance and is typically used in high-speed switching applications. This component is ideal for designs where space-saving and high-performance are critical due to its compact package and efficient power handling.
Key features of the IRF7456TRPBF include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of approximately 12.8A, and a low gate charge that allows for rapid switching. Its small footprint, typically in an SO-8 package, makes it suitable for surface-mount technology (SMT) applications, where board space is a premium.
The device is commonly used in a variety of applications such as DC-DC converters, motor drives, and power management systems. It provides reliable performance and thermal management in these systems due to its robust design and efficient electrical characteristics.
Key features of the IRF7456TRPBF include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of approximately 12.8A, and a low gate charge that allows for rapid switching. Its small footprint, typically in an SO-8 package, makes it suitable for surface-mount technology (SMT) applications, where board space is a premium.
The device is commonly used in a variety of applications such as DC-DC converters, motor drives, and power management systems. It provides reliable performance and thermal management in these systems due to its robust design and efficient electrical characteristics.
Equivalent
The IRF7456TRPBF is a N-channel MOSFET. Equivalent products that can be considered include:
1. IRF540N
2. IRLB8743PBF
3. FQP30N06L
4. STP55NF06
Ensure the chosen equivalent matches key specifications like voltage, current ratings, and package type for compatibility in your application. Always refer to the datasheet of each part for detailed comparisons.
1. IRF540N
2. IRLB8743PBF
3. FQP30N06L
4. STP55NF06
Ensure the chosen equivalent matches key specifications like voltage, current ratings, and package type for compatibility in your application. Always refer to the datasheet of each part for detailed comparisons.
Features
The IRF7456TRPBF is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. N-channel MOSFET: It utilizes an N-channel configuration, which typically offers efficient and fast switching.
2. Low On-Resistance: The device has a low on-resistance, reducing energy loss and improving performance in power conversion applications.
3. High Current Capacity: It supports high current loads, making it suitable for demanding power applications.
4. Fast Switching Speed: The MOSFET is designed for rapid switching, enhancing efficiency in switching circuits.
5. Thermal Performance: It includes features for effective thermal management, allowing it to operate reliably under high temperatures.
6. RoHS Compliant: The IRF7456TRPBF is compliant with RoHS standards, ensuring it meets environmental and safety regulations.
7. Package Type: It is available in a surface-mount package, which is ideal for compact and space-constrained designs.
These features make the IRF7456TRPBF suitable for use in applications like motor control, DC-DC converters, and other power management systems.
1. N-channel MOSFET: It utilizes an N-channel configuration, which typically offers efficient and fast switching.
2. Low On-Resistance: The device has a low on-resistance, reducing energy loss and improving performance in power conversion applications.
3. High Current Capacity: It supports high current loads, making it suitable for demanding power applications.
4. Fast Switching Speed: The MOSFET is designed for rapid switching, enhancing efficiency in switching circuits.
5. Thermal Performance: It includes features for effective thermal management, allowing it to operate reliably under high temperatures.
6. RoHS Compliant: The IRF7456TRPBF is compliant with RoHS standards, ensuring it meets environmental and safety regulations.
7. Package Type: It is available in a surface-mount package, which is ideal for compact and space-constrained designs.
These features make the IRF7456TRPBF suitable for use in applications like motor control, DC-DC converters, and other power management systems.
Pinout
The IRF7456TRPBF is a HEXFET Power MOSFET from Infineon Technologies, commonly used for switching applications. It is typically provided in an SO-8 (Small Outline) package, which consists of 8 pins. Here are the pin functions:
1. Pins 1, 2, 3: Source (S) - These pins are typically connected together internally and serve as the source terminal of the MOSFET, common in many MOSFET packages for better current handling.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the source and drain.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are usually connected together internally and serve as the drain terminal, allowing current to flow from the drain to the source when the MOSFET is turned on by the gate voltage.
This device is used in a variety of applications, including power management, DC-DC converters, and other switching applications due to its efficient and robust performance characteristics.
1. Pins 1, 2, 3: Source (S) - These pins are typically connected together internally and serve as the source terminal of the MOSFET, common in many MOSFET packages for better current handling.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the source and drain.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are usually connected together internally and serve as the drain terminal, allowing current to flow from the drain to the source when the MOSFET is turned on by the gate voltage.
This device is used in a variety of applications, including power management, DC-DC converters, and other switching applications due to its efficient and robust performance characteristics.
Manufacturer
The IRF7456TRPBF is manufactured by Infineon Technologies. Infineon Technologies is a German company known for designing, manufacturing, and supplying a wide range of semiconductor solutions. It operates globally and serves various industries, including automotive, industrial, consumer electronics, and communications. Infineon specializes in power semiconductors, microcontrollers, sensors, and security solutions, making it a key player in the semiconductor industry.
Application
The IRF7456TRPBF is a power MOSFET typically used in applications requiring efficient power management and high-speed switching. Common areas of application include DC-DC converters, power supplies, motor drives, and inverters. It is also favored in battery-powered systems due to its low on-resistance and fast switching capabilities. This MOSFET is suitable for use in telecommunications, consumer electronics, and automotive electronics, where compact and efficient power control is crucial. Its robust design ensures reliability in demanding environments, making it ideal for industrial applications as well.
Package
The IRF7456TRPBF is a MOSFET packaged in a standard D-Pak (TO-252) surface-mount design. This packaging is common for power transistors, allowing efficient heat dissipation and compact mounting on circuit boards.
