이미지는 참조용입니다.
IRF7507TRPBF
+BOMMOSFET N/P-CH 20V 2.4A MICRO8
-
제조업체인피니티 테크놀로지
-
제조업체 부품 #IRF7507TRPBF
-
데이터시트 IRF7507TRPBF DataSheet
-
재고6704
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF7507 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 1.7A |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package | Micro8™ |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
The IRF7507TRPBF is a surface-mount N-channel MOSFET designed for efficient power management applications. Produced by Infineon Technologies, this MOSFET is part of their HEXFET® Power MOSFET series. It is specifically engineered to deliver superior performance in switching applications.
Key specifications include a maximum drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 5.8A. The device features low on-resistance, which reduces power losses and enhances efficiency, making it suitable for high-performance applications. Its compact SOT-23 package ensures space-saving on circuit boards, which is crucial for compact electronic devices.
The MOSFET is designed for applications such as DC-DC converters, power management in portable devices, and other circuits requiring efficient electronic switching. Additionally, it offers fast switching speeds and is reliable for use in various environmental conditions, thanks to its robust construction. The IRF7507TRPBF combines efficiency with reliability, making it a preferred choice in modern electronic designs.
Key specifications include a maximum drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 5.8A. The device features low on-resistance, which reduces power losses and enhances efficiency, making it suitable for high-performance applications. Its compact SOT-23 package ensures space-saving on circuit boards, which is crucial for compact electronic devices.
The MOSFET is designed for applications such as DC-DC converters, power management in portable devices, and other circuits requiring efficient electronic switching. Additionally, it offers fast switching speeds and is reliable for use in various environmental conditions, thanks to its robust construction. The IRF7507TRPBF combines efficiency with reliability, making it a preferred choice in modern electronic designs.
Equivalent
The IRF7507TRPBF is a dual N-channel MOSFET. Equivalent products include:
1. NXP PSMN1R8-30PL - Similar voltage and current ratings.
2. ON Semiconductor NTMFS4935NT1G - Comparable specifications.
3. Vishay Si4936DY - Dual N-channel with similar features.
4. STMicroelectronics STS5DNF60L - Close in voltage and current characteristics.
Ensure to verify specifications like voltage, current, and package type to match your application requirements.
1. NXP PSMN1R8-30PL - Similar voltage and current ratings.
2. ON Semiconductor NTMFS4935NT1G - Comparable specifications.
3. Vishay Si4936DY - Dual N-channel with similar features.
4. STMicroelectronics STS5DNF60L - Close in voltage and current characteristics.
Ensure to verify specifications like voltage, current, and package type to match your application requirements.
Features
The IRF7507TRPBF is a dual N-channel MOSFET housed in a SO-8 package. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
2. Current Capacity: The continuous drain current (I_D) is rated at 5.8A, making it suitable for various switching applications.
3. R_DS(on): Low on-resistance, typically around 0.019 ohms, ensures efficient operation with minimal power loss.
4. Gate Charge: Features low total gate charge, facilitating fast switching speeds and reduced power dissipation.
5. Thermal Performance: The MOSFET offers good thermal resistance, enhancing reliability under different operating conditions.
6. Application: It's ideal for DC-DC converters, load switches, and power management applications where space and efficiency are critical.
7. Package Type: The SO-8 package provides a compact footprint, suitable for surface-mounted assembly.
Overall, the IRF7507TRPBF is designed for efficiency and performance in compact power management solutions.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
2. Current Capacity: The continuous drain current (I_D) is rated at 5.8A, making it suitable for various switching applications.
3. R_DS(on): Low on-resistance, typically around 0.019 ohms, ensures efficient operation with minimal power loss.
4. Gate Charge: Features low total gate charge, facilitating fast switching speeds and reduced power dissipation.
5. Thermal Performance: The MOSFET offers good thermal resistance, enhancing reliability under different operating conditions.
6. Application: It's ideal for DC-DC converters, load switches, and power management applications where space and efficiency are critical.
7. Package Type: The SO-8 package provides a compact footprint, suitable for surface-mounted assembly.
Overall, the IRF7507TRPBF is designed for efficiency and performance in compact power management solutions.
Pinout
The IRF7507TRPBF is a dual N-channel MOSFET typically used for switching applications. It is housed in an SO-8 package, which means it has 8 pins. The main functions of the pins are as follows:
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Used to control the first MOSFET.
3. Source 1 (S1): Connected to the source of the first MOSFET.
4. Drain 2 (D2): Connected to the drain of the second MOSFET.
5. Gate 2 (G2): Used to control the second MOSFET.
6. Source 2 (S2): Connected to the source of the second MOSFET.
7. Common Source (SC): Common source connection for both MOSFETs.
8. Common Drain (DC): Optional common drain connection for both MOSFETs.
This dual MOSFET configuration is often used for efficient power management and switching applications in various electronic circuits.
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Used to control the first MOSFET.
3. Source 1 (S1): Connected to the source of the first MOSFET.
4. Drain 2 (D2): Connected to the drain of the second MOSFET.
5. Gate 2 (G2): Used to control the second MOSFET.
6. Source 2 (S2): Connected to the source of the second MOSFET.
7. Common Source (SC): Common source connection for both MOSFETs.
8. Common Drain (DC): Optional common drain connection for both MOSFETs.
This dual MOSFET configuration is often used for efficient power management and switching applications in various electronic circuits.
Manufacturer
The IRF7507TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing and producing a wide range of semiconductor solutions. Founded in 1999 as a spin-off from Siemens AG, Infineon is known for its innovative products and technologies in areas such as automotive, industrial power control, power management, digital security solutions, and wireless communication.
Infineon is a key player in the semiconductor industry, providing components that are integral to various electronic devices and systems. The company is involved in the development of power semiconductors, microcontrollers, sensors, and secure communication integrated circuits. It serves numerous industries, including automotive, consumer electronics, industrial, and security sectors. Infineon's commitment to energy efficiency, mobility, and security solutions marks its position as a leader in the global semiconductor market.
Infineon is a key player in the semiconductor industry, providing components that are integral to various electronic devices and systems. The company is involved in the development of power semiconductors, microcontrollers, sensors, and secure communication integrated circuits. It serves numerous industries, including automotive, consumer electronics, industrial, and security sectors. Infineon's commitment to energy efficiency, mobility, and security solutions marks its position as a leader in the global semiconductor market.
Application
The IRF7507TRPBF is a dual N-channel MOSFET commonly used in various applications due to its efficient power handling and fast-switching capabilities. Key application areas include power management systems, DC-DC converters, motor control circuits, load switches, and battery management systems. It can also be used in automotive applications for electronic control units and in industrial automation systems that require reliable switching and power regulation. Its compact size makes it suitable for portable and space-constrained devices, enhancing overall system efficiency and performance.
Package
The IRF7507TRPBF is typically supplied in a surface-mount package format known as a DirectFET. This packaging is designed to provide improved thermal performance and efficiency in electronic applications.
