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IRF7842TRPBF
+BOMMOSFET N-CH 40V 18A 8SO
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7842TRPBF
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데이터시트 IRF7842TRPBF DataSheet
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패키지 SOIC-8
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재고4070
365 1일 품질 보증
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 2.25V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4500 pF @ 20 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
Key specifications include a drain-to-source voltage (V_DS) rating of 40V and a continuous drain current (I_D) capability of up to 45A, making it capable of handling significant power loads. The IRF7842TRPBF is housed in a surface-mount SO-8 package, which is compact and suitable for high-density circuit board designs.
The "TRPBF" suffix indicates that the device is supplied in tape and reel format for automated assembly and is lead-free, complying with RoHS standards. Overall, the IRF7842TRPBF is a versatile MOSFET designed to deliver efficient power management in various electronic applications.
Equivalent
1. IRF2804: Also an N-channel MOSFET with similar ratings.
2. IRF3708: Offers comparable performance characteristics.
3. FQP30N06L: Another N-channel MOSFET with similar specifications.
4. NXP PMV20XN: Matches in terms of voltage and current ratings.
5. STP55NF06: Provides similar voltage, current, and RDS(on) characteristics.
Always verify specifications and compatibility before using an equivalent.
Features
1. N-Channel MOSFET: Designed for optimal performance in N-channel configurations.
2. Low On-Resistance: Features a low R_DS(on), enhancing efficiency by reducing power loss during conduction.
3. High Current Capacity: Capable of handling substantial current loads, suitable for demanding environments.
4. Fast Switching Speed: Offers quick switching capabilities, which are ideal for high-frequency applications.
5. TO-252 Package: Comes in a D-Pak surface-mount package, facilitating easy integration into circuits with limited space.
6. RoHS Compliant: Environmentally friendly design that adheres to restrictions on hazardous substances.
7. Thermal Performance: Excellent thermal characteristics to manage heat dissipation effectively, ensuring reliability under high-power conditions.
These features make the IRF7842TRPBF suitable for applications like power management, DC-DC converters, and various automotive and industrial uses.
Pinout
The primary functions of the pins are:
1. Drain (D): This is the terminal where the output current flows from the MOSFET. Multiple pins in the SO-8 package are connected to the drain to allow for better current handling capabilities.
2. Source (S): This is the terminal where the input current flows into the MOSFET. Similar to the drain, multiple pins are connected to the source.
3. Gate (G): This terminal controls the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source, allowing the MOSFET to act as a switch.
Typically, the exact pin configuration can vary slightly depending on the manufacturer, so it's crucial to refer to the specific datasheet for the IRF7842TRPBF for precise pin assignments and connections.
Manufacturer
Application
1. DC-DC Converters: Utilized in power supplies for converting voltages efficiently.
2. Motor Control Circuits: Employed in driving motors in various electronic devices.
3. Load Switches: Acts as a switch for controlling power to different parts of a circuit.
4. Battery Management Systems: Used in charging and protection circuits.
5. Solar Inverters: Plays a role in converting solar power for electrical grids.
6. Telecommunications Equipment: Assists in power management for equipment stability.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.