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IRFB4410ZPBF
+BOMMOSFET N-CH 100V 97A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFB4410ZPBF
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데이터시트 IRFB4410ZPBF DataSheet
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패키지 TO220
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 97A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9mOhm @ 58A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4820 pF @ 50 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
- Voltage Rating: 100V
- Current Rating: 96A (continuous)
- Low On-Resistance (RDS(on)): 3.7mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor drives, and power supplies.
- Package: TO-220AB (through-hole), ensuring good thermal performance.
It is commonly used in switching power supplies, inverters, and motor control due to its robustness and efficiency. The ZPBF suffix indicates lead-free (Pb-free) packaging.
For optimal performance, ensure proper gate drive (typically 10V) and heat dissipation.
Equivalent
- IRFB4410Z (same specs, different packaging)
- IRFB4310ZPBF (similar, lower current rating)
- STP110N8F6 (STMicroelectronics, comparable specs)
- IPP110N20N3 (Infineon, higher voltage but similar performance)
- AUIRFB4410Z (Auto-grade variant)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 100V
- Current Rating: 96A (continuous)
- Low On-Resistance (RDS(on)): 3.7mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Rated: Robust against inductive load spikes
- Package: TO-220AB (through-hole, easy mounting)
- Low Gate Charge (Qg): 130nC (typ), reducing switching losses
- Applications: Power supplies, motor drives, DC-DC converters
This MOSFET is designed for high-power, high-efficiency switching with minimal conduction losses.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- 100V drain-source voltage
- 96A continuous drain current (at 25°C)
- Low RDS(on) (4.5mΩ max at 10V VGS)
- Suitable for high-power switching (e.g., motor drives, inverters).
Concisely: 3-pin (G, D, S), 100V/96A N-MOSFET for power switching.
Manufacturer
Infineon Technologies is a German semiconductor company specializing in power electronics, microcontrollers, and security solutions. It serves industries like automotive, industrial, and consumer electronics, known for high-performance components such as MOSFETs, IGBTs, and power management ICs.
The IRFB4410ZPBF is a N-channel power MOSFET, reflecting IR's legacy in power semiconductor innovation.
Application
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, servo and BLDC motor drives.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle power systems, battery management.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (up to 96A) make it ideal for efficient power switching in demanding environments.
