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IRFF9130

Name: IRFF9130
Rating: 4.8 (15 reviews)

+BOM

6.5A, 100V, 0.3OHM, P-CHANNEL MO

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제조업체 부품 #IRFF9130
데이터시트 IRFF9130 DataSheet
패키지 TO-205AF
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사양

속성	가치
Package / Case	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain(Id) @ 25°C	6.5A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V
Rds On(Max) @ Id Vgs	300mOhm @ 3A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	45 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	500 pF @ 25 V
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)

개요

Equivalent

The IRFF9130 is a P-channel HEXFET power MOSFET. Equivalent alternatives include:
- IRF9Z34N (Similar specs, P-channel)
- IRF4905 (Higher current rating)
- STP80PF55 (Comparable P-channel MOSFET)
- FQP27P06 (Lower voltage but similar characteristics)
Always verify datasheet parameters (VDS, ID, RDS(on)) for compatibility.

Features

The IRFF9130 is a P-channel power MOSFET with the following key features:
- Voltage Rating: -100V (Drain-Source, V_DSS)
- Current Rating: -12A (Continuous Drain Current, I_D)
- Low On-Resistance: 0.3Ω (R_DS(on) at V_GS = -10V)
- Fast Switching: Suitable for high-efficiency applications
- Gate-Source Voltage (V_GS): ±20V (max)
- Power Dissipation: 50W (T_C = 25°C)
- Package: TO-220 (through-hole, easy to mount)
- Applications: Power management, DC-DC converters, motor control, and load switching
Compact, robust, and efficient for medium-power circuits.

Pinout

The IRFF9130 is a P-channel HEXFET power MOSFET in a TO-220 package.
Pin Count: 3 pins
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Connects to ground (low-voltage side).
Key Features:
- Voltage Rating: -100V
- Current Rating: -12A (continuous)
- Low On-Resistance (R_DS(on)): ~0.5Ω (typ.)
- Application: Power switching in circuits like motor control, power supplies, and inverters.
The TO-220 package allows for easy mounting on heat sinks.

Manufacturer

The IRFF9130 is a P-channel HEXFET power MOSFET manufactured by International Rectifier (IR), now part of Infineon Technologies.
Infineon Technologies is a German semiconductor company specializing in power electronics, microcontrollers, and security solutions. It acquired International Rectifier in 2015, integrating IR's expertise in power management technologies. Infineon is a global leader in semiconductor solutions for automotive, industrial, and renewable energy applications.
The IRFF9130 is part of IR's legacy product line, designed for high-efficiency power switching applications.

Application

The IRFF9130 is a P-channel HEXFET power MOSFET commonly used in:
1. Power Management – Switching and regulation in DC-DC converters, voltage regulators, and power supplies.
2. Motor Control – Driving small motors in automotive, industrial, or consumer electronics.
3. Load Switching – Efficiently turning high-current loads on/off in circuits.
4. Battery Protection – Reverse polarity protection and discharge control in portable devices.
5. Inverters & Converters – Used in energy conversion systems like solar inverters.
Its low on-resistance and high current handling make it suitable for high-efficiency, compact designs.

Package

The IRFF9130 is a P-channel HEXFET Power MOSFET typically available in a TO-220AB package. This through-hole package features three leads (gate, drain, source) and a metal tab for heat dissipation, making it suitable for high-power applications. The TO-220AB is widely used for its robustness and ease of mounting with a heatsink.