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RFD14N05L
+BOMMOSFET N-CH 50V 14A IPAK
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제조업체해리스 회사
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제조업체 부품 #RFD14N05L
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데이터시트 RFD14N05L DataSheet
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 14A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 14A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 670 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
개요
Description
The RFD14N05L is an N-channel MOSFET transistor known for its high efficiency and fast switching capabilities. It is commonly used in power management and conversion applications within electronic circuits. This MOSFET is characterized by a low on-resistance, which minimizes power loss and heat generation, making it suitable for use in high-performance and compact electronic devices.
Key features of the RFD14N05L include a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 14A, making it versatile for medium power applications. Its low gate threshold voltage allows it to be driven directly from low-voltage logic levels, enhancing its ease of integration into various systems.
The RFD14N05L is often employed in applications such as DC-DC converters, motor controllers, and switching regulators. Its TO-252 package ensures effective heat dissipation and mechanical stability. Overall, the RFD14N05L is valued for its reliability and efficiency in enhancing the performance and energy efficiency of electronic circuits.
Key features of the RFD14N05L include a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 14A, making it versatile for medium power applications. Its low gate threshold voltage allows it to be driven directly from low-voltage logic levels, enhancing its ease of integration into various systems.
The RFD14N05L is often employed in applications such as DC-DC converters, motor controllers, and switching regulators. Its TO-252 package ensures effective heat dissipation and mechanical stability. Overall, the RFD14N05L is valued for its reliability and efficiency in enhancing the performance and energy efficiency of electronic circuits.
Equivalent
The RFD14N05L is a MOSFET transistor. Equivalent products with similar specifications may include:
1. IRFZ44N by Infineon
2. STP55NF06 by STMicroelectronics
3. FQP30N06L by ON Semiconductor
4. IRLB3034PBF by Vishay
Ensure compatibility by comparing specific parameters such as voltage, current rating, and package type. Always consult the datasheets for precise matching.
1. IRFZ44N by Infineon
2. STP55NF06 by STMicroelectronics
3. FQP30N06L by ON Semiconductor
4. IRLB3034PBF by Vishay
Ensure compatibility by comparing specific parameters such as voltage, current rating, and package type. Always consult the datasheets for precise matching.
Features
The RFD14N05L is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications. Here are its key features:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 50V and a continuous drain current (I_D) of around 14A, making it suitable for moderate power applications.
2. Low On-Resistance: The MOSFET features low on-resistance (R_DS(on)), typically around 0.1 ohms, which ensures reduced power loss and improved efficiency during operation.
3. Fast Switching: Designed for fast switching speeds, which enhances performance in applications requiring quick turn-on and turn-off times.
4. Package Type: It’s commonly available in TO-252 or DPAK surface-mount packages, which helps in minimizing space in circuit designs while providing effective heat dissipation.
5. Thermal Performance: Efficient thermal management supports reliable operation under varying temperatures, often with a maximum junction temperature (T_J) of 175°C.
6. Applications: Suitable for use in power management, DC-DC converters, motor drives, and various switching applications in automotive and industrial settings.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 50V and a continuous drain current (I_D) of around 14A, making it suitable for moderate power applications.
2. Low On-Resistance: The MOSFET features low on-resistance (R_DS(on)), typically around 0.1 ohms, which ensures reduced power loss and improved efficiency during operation.
3. Fast Switching: Designed for fast switching speeds, which enhances performance in applications requiring quick turn-on and turn-off times.
4. Package Type: It’s commonly available in TO-252 or DPAK surface-mount packages, which helps in minimizing space in circuit designs while providing effective heat dissipation.
5. Thermal Performance: Efficient thermal management supports reliable operation under varying temperatures, often with a maximum junction temperature (T_J) of 175°C.
6. Applications: Suitable for use in power management, DC-DC converters, motor drives, and various switching applications in automotive and industrial settings.
Pinout
The RFD14N05L is an N-channel power MOSFET. It typically has three pins, which are:
1. Gate (G): This pin is used to control the conductivity between the drain and source. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This pin is the output for the current flowing through the MOSFET when it is in the "on" state. The current flows from drain to source when the MOSFET is activated.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to ground or the negative side of a power supply in most applications.
The RFD14N05L is designed for use in high-speed switching applications, such as in power supplies, motor drivers, and other electronic applications requiring efficient power management. It is characterized by a low on-resistance and can handle significant current, making it suitable for medium power applications.
1. Gate (G): This pin is used to control the conductivity between the drain and source. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This pin is the output for the current flowing through the MOSFET when it is in the "on" state. The current flows from drain to source when the MOSFET is activated.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to ground or the negative side of a power supply in most applications.
The RFD14N05L is designed for use in high-speed switching applications, such as in power supplies, motor drivers, and other electronic applications requiring efficient power management. It is characterized by a low on-resistance and can handle significant current, making it suitable for medium power applications.
Manufacturer
The RFD14N05L is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading American semiconductor supplier company that focuses on energy-efficient electronics. They design and manufacture a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. The company plays a significant role in providing solutions for power management and energy-efficient technologies, aligning with global demands for sustainability and innovation in electronic systems.
Application
The RFD14N05L is an N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in power supply circuits for efficient switching and voltage regulation.
2. Motor Control: Suitable for driving motors by managing current flow in motor driver circuits.
3. DC-DC Converters: Utilized in converter circuits to control power conversion with high efficiency.
4. Lighting Systems: Employed in LED drivers and lighting controls for energy-efficient lighting solutions.
5. Battery Protection: Acts as a switch in battery management systems to prevent overcurrent and other faults.
6. Consumer Electronics: Found in devices such as power adapters and portable electronics for efficient power handling.
1. Power Management: Used in power supply circuits for efficient switching and voltage regulation.
2. Motor Control: Suitable for driving motors by managing current flow in motor driver circuits.
3. DC-DC Converters: Utilized in converter circuits to control power conversion with high efficiency.
4. Lighting Systems: Employed in LED drivers and lighting controls for energy-efficient lighting solutions.
5. Battery Protection: Acts as a switch in battery management systems to prevent overcurrent and other faults.
6. Consumer Electronics: Found in devices such as power adapters and portable electronics for efficient power handling.
Package
The RFD14N05L is a MOSFET with a TO-252 package type, also known as DPAK. This package is commonly used for surface-mount applications, offering a compact design suitable for efficient heat dissipation.
