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IRFH5210TRPBF
+BOMMOSFET N-CH 100V 10A/55A 8PQFN
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFH5210TRPBF
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데이터시트 IRFH5210TRPBF DataSheet
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패키지 PQFN-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta), 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 14.9mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2570 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
개요
Description
The IRFH5210TRPBF is a HEXFET® power MOSFET designed and manufactured by Infineon Technologies. It is part of the company's extensive range of MOSFETs, which are used widely in power management applications. This particular model is designed for high-efficiency performance in systems that require high-speed switching and low on-state resistance.
Key features include:
- A low on-resistance (R_DS(on)), which minimizes conduction losses in the system.
- Fast switching capabilities that help in reducing switching losses and improving overall efficiency.
- It typically comes in a compact package that facilitates its use in space-constrained applications.
- High reliability and durability make it suitable for use in demanding environments.
Common applications for the IRFH5210TRPBF include power supplies, DC-DC converters, motor drives, and other applications that require efficient power management. The combination of high efficiency, reliability, and compact size makes it a popular choice among engineers designing modern electronic systems.
Key features include:
- A low on-resistance (R_DS(on)), which minimizes conduction losses in the system.
- Fast switching capabilities that help in reducing switching losses and improving overall efficiency.
- It typically comes in a compact package that facilitates its use in space-constrained applications.
- High reliability and durability make it suitable for use in demanding environments.
Common applications for the IRFH5210TRPBF include power supplies, DC-DC converters, motor drives, and other applications that require efficient power management. The combination of high efficiency, reliability, and compact size makes it a popular choice among engineers designing modern electronic systems.
Equivalent
The IRFH5210TRPBF is a Power MOSFET from Infineon Technologies (formerly International Rectifier). Equivalent products include:
1. NXP PSMN1R1-40YLD - A similar Power MOSFET with comparable specifications.
2. STMicroelectronics STL40N10F7 - Offers similar voltage and current ratings.
3. ON Semiconductor NVMFS5C404NL - Has equivalent performance characteristics.
4. Vishay SiR680ADP - Also a comparable Power MOSFET for similar applications.
Always confirm specifications and compatibility for your specific application.
1. NXP PSMN1R1-40YLD - A similar Power MOSFET with comparable specifications.
2. STMicroelectronics STL40N10F7 - Offers similar voltage and current ratings.
3. ON Semiconductor NVMFS5C404NL - Has equivalent performance characteristics.
4. Vishay SiR680ADP - Also a comparable Power MOSFET for similar applications.
Always confirm specifications and compatibility for your specific application.
Features
The IRFH5210TRPBF is a Power MOSFET featuring:
1. N-Channel MOSFET: Designed for efficient power switching.
2. Voltage Rating: Typically has a drain-to-source voltage (V_DS) of 100V, allowing it to handle relatively high voltages.
3. Current Rating: Can handle a continuous drain current (I_D) up to a specified maximum, often around 42A, depending on conditions and packaging.
4. R_DS(on): Low on-state resistance, generally around 7.9mΩ, which minimizes power loss and improves efficiency.
5. Package Type: Supplied in a compact, surface-mount package like PQFN, which is conducive for high-density PCB designs.
6. Temperature Range: Typically operates within a wide temperature range, enhancing reliability in diverse environments.
7. Applications: Suited for use in power management, motor drives, DC-DC converters, and other high-efficiency power applications.
Its design focuses on delivering low conduction and switching losses, contributing to greater overall system efficiency.
1. N-Channel MOSFET: Designed for efficient power switching.
2. Voltage Rating: Typically has a drain-to-source voltage (V_DS) of 100V, allowing it to handle relatively high voltages.
3. Current Rating: Can handle a continuous drain current (I_D) up to a specified maximum, often around 42A, depending on conditions and packaging.
4. R_DS(on): Low on-state resistance, generally around 7.9mΩ, which minimizes power loss and improves efficiency.
5. Package Type: Supplied in a compact, surface-mount package like PQFN, which is conducive for high-density PCB designs.
6. Temperature Range: Typically operates within a wide temperature range, enhancing reliability in diverse environments.
7. Applications: Suited for use in power management, motor drives, DC-DC converters, and other high-efficiency power applications.
Its design focuses on delivering low conduction and switching losses, contributing to greater overall system efficiency.
Pinout
The IRFH5210TRPBF is a power MOSFET, specifically a HEXFET® Power MOSFET from Infineon Technologies (formerly International Rectifier). It is typically used for switching applications and power management in electronic circuits.
The IRFH5210TRPBF comes in a PQFN (Power Quad Flat No-Lead) package, specifically a 5x6 mm package. The pin count for this package is typically 8, although the exact number of functional pins may vary slightly based on the specific design and manufacturer conventions.
The primary functions of the pins are:
1. Gate (G): Controls the MOSFET switching on and off by applying voltage.
2. Drain (D): The terminal through which the current flows when the MOSFET is on.
3. Source (S): The terminal that connects to the ground or common side of the circuit.
Additionally, the PQFN package may have multiple drain and source connections to handle higher current and improve thermal performance. Always refer to the datasheet for precise details on pin configuration and functions.
The IRFH5210TRPBF comes in a PQFN (Power Quad Flat No-Lead) package, specifically a 5x6 mm package. The pin count for this package is typically 8, although the exact number of functional pins may vary slightly based on the specific design and manufacturer conventions.
The primary functions of the pins are:
1. Gate (G): Controls the MOSFET switching on and off by applying voltage.
2. Drain (D): The terminal through which the current flows when the MOSFET is on.
3. Source (S): The terminal that connects to the ground or common side of the circuit.
Additionally, the PQFN package may have multiple drain and source connections to handle higher current and improve thermal performance. Always refer to the datasheet for precise details on pin configuration and functions.
Manufacturer
The IRFH5210TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that focuses on a wide range of electronic components and systems. The company is known for developing products used in automotive, industrial, and consumer electronics applications. Infineon's offerings include power semiconductors, microcontrollers, sensors, and integrated circuits. They are particularly recognized for their expertise in power management and energy-efficient technologies.
Application
The IRFH5210TRPBF is a Power MOSFET commonly used in applications requiring efficient power management. Its primary application areas include:
1. DC-DC Converters: Used in voltage regulation and power supply circuits.
2. Motor Control: Suitable for controlling small to medium-sized motors in automotive and industrial applications.
3. Load Switches: Employed in switching applications due to its low on-resistance and high-speed switching capabilities.
4. Battery Management Systems: Used for efficient battery charging and discharging.
5. Power Management in Portable Devices: Ideal for smartphones, tablets, and laptops.
6. Telecommunications Equipment: Used in power supply circuits for signal processing devices.
These applications benefit from the MOSFET's efficiency, compact size, and thermal performance.
1. DC-DC Converters: Used in voltage regulation and power supply circuits.
2. Motor Control: Suitable for controlling small to medium-sized motors in automotive and industrial applications.
3. Load Switches: Employed in switching applications due to its low on-resistance and high-speed switching capabilities.
4. Battery Management Systems: Used for efficient battery charging and discharging.
5. Power Management in Portable Devices: Ideal for smartphones, tablets, and laptops.
6. Telecommunications Equipment: Used in power supply circuits for signal processing devices.
These applications benefit from the MOSFET's efficiency, compact size, and thermal performance.
Package
The IRFH5210TRPBF is a power MOSFET, and it comes in a PQFN (Power Quad Flat No-lead) package. This package type is known for its compact size and efficient thermal performance, making it suitable for high-density applications.
