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IRFP260MPBF

MOSFET N-CH 200V 50A TO247AC

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제조업체 부품 #IRFP260MPBF
데이터시트 IRFP260MPBF DataSheet
패키지 TO-247
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사양

속성	가치
Package	Tube
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	40mOhm @ 28A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	234 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	4057 pF @ 25 V
PowerDissipation(Max)	300W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247AC

개요

Description

The IRFP260MPBF is a N-channel power MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 40mΩ (max)
- High Power Handling: Up to 300W
- Fast Switching Speed
It is commonly used in switching power supplies, motor drives, inverters, and audio amplifiers due to its efficiency and robustness. The TO-247AC package ensures good thermal performance, and it includes an avalanche-rated design for reliability in harsh conditions.
This MOSFET is ideal for applications requiring high current and voltage handling with minimal conduction losses.

Equivalent

Equivalent products to the IRFP260MPBF (N-channel MOSFET, 200V, 50A, TO-247) include:
- IRFP260N (similar specs, same package)
- IRFP250N (200V, 33A, TO-247)
- FDPF33N25 (250V, 33A, TO-247)
- STP80NF55-06 (55V, 80A, TO-220/TO-247)
- IXFH50N20 (200V, 50A, TO-247)
Check datasheets for exact compatibility in your application.

Features

The IRFP260MPBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 40mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- High Power Handling: Up to 300W (with proper heat sinking)
- Avalanche Energy Rated: Robust against inductive spikes
- TO-247 Package: Easy mounting and heat dissipation
- Logic-Level Gate Drive (Partially): Enhanced gate control (but check datasheet for exact thresholds)
Ideal for switching power supplies, motor control, and high-current DC/DC converters.

Manufacturer

The IRFP260MPBF is manufactured by Infineon Technologies, a leading German semiconductor company specializing in power management, automotive, and industrial applications. Infineon is known for high-performance MOSFETs, IGBTs, and other power electronics components. The IRFP260MPBF is a Power MOSFET designed for high-current, high-voltage applications like motor drives and power supplies.
Infineon, headquartered in Neubiberg, Germany, emerged from Siemens' semiconductor division in 1999 and is a key player in energy efficiency and IoT solutions.

Application

The IRFP260MPBF, a power MOSFET, is commonly used in:
1. Power Supplies – High-efficiency switching in SMPS and inverters.
2. Motor Control – Drives for brushed/brushless DC motors in industrial/automotive systems.
3. Audio Amplifiers – High-power Class D amplifier designs.
4. Renewable Energy – Solar inverters and charge controllers.
5. Welding Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (50A) make it suitable for high-power, high-frequency switching.

Package

The IRFP260MPBF is a Power MOSFET housed in a TO-247AC package. This package type is a through-hole, three-lead design with a molded plastic body, offering high power dissipation and robust thermal performance. It is commonly used in high-current and high-voltage applications. The TO-247AC variant includes an isolated mounting tab for easier heatsink attachment.