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IRFS4229TRLPBF
+BOMMOSFET N-CH 250V 45A D2PAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFS4229TRLPBF
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데이터시트 IRFS4229TRLPBF DataSheet
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패키지 TO-263-3
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재고5622
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 45A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 48mOhm @ 26A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4560 pF @ 25 V |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
개요
Description
Equivalent
1. STMicroelectronics STP55NF06
2. Vishay Siliconix SiHF530
3. ON Semiconductor NTP75N06
When selecting an equivalent, it’s crucial to compare parameters like voltage rating, current capacity, RDS(on), and package type to ensure compatibility with your application. Always verify with the datasheet for precise matching.
Features
1. N-Channel MOSFET: It is an N-channel device, which is typically used for its low on-state resistance and high-speed switching performance.
2. Voltage and Current Ratings: Capable of withstanding high voltages and currents, making it suitable for a wide range of power applications.
3. Low On-State Resistance: This feature helps in reducing power losses and improving efficiency in power conversion systems.
4. Fast Switching: Designed for high-speed operation, which enhances performance in applications like power supplies, motor controllers, and inverters.
5. Rugged Construction: The device is built to handle high power levels and is robust against thermal and electrical stress.
6. Surface-Mount Package: It is available in a surface-mount package, making it suitable for compact and space-constrained applications.
7. Applications: Commonly used in applications like DC-DC converters, load switches, and other power management systems.
8. Pb-Free: The "PBF" indicates it is lead-free, complying with environmental standards.
These features make the IRFS4229TRLPBF a versatile component for various power electronic applications.
Pinout
1. Gate (G): The gate terminal controls the MOSFET's switching state by applying voltage to turn the device on or off.
2. Drain (D): The drain is the terminal where the load current flows into the MOSFET.
3. Source (S): The source terminal is where the current exits the MOSFET.
The IRFS4229TRLPBF is designed for high-efficiency power management applications, featuring low on-resistance and robust performance capabilities to handle high current and voltage. It is often used in power conversion and motor drive applications due to its efficiency and reliability. For precise specifications and detailed pin functions, always refer to the manufacturer's datasheet.
Manufacturer
Application
1. Power Supply Systems: Used in DC-DC converters and switching power supplies.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. LED Lighting: Utilized in LED drivers for efficient power management.
4. Battery Management: Applied in battery protection and charging circuits.
5. Inverters: Employed in solar inverters and UPS systems for efficient energy conversion.
These applications leverage the MOSFET's low on-resistance and high current capacity to improve system performance and reliability.