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IRFZ24NPBF
+BOMMOSFET N-CH 55V 17A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFZ24NPBF
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데이터시트 IRFZ24NPBF DataSheet
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패키지 TO-220-3
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 370 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
개요
Description
Key specifications include a maximum continuous drain current of 17A, a drain-source voltage (V_DS) rating of 55V, and a gate threshold voltage typically around 2 to 4V. The device offers low on-state resistance (R_DS(on)) of approximately 0.06 ohms, enhancing its efficiency by reducing power losses during operation.
The IRFZ24NPBF is frequently used in applications such as DC-DC converters, motor controllers, and other circuits that require efficient switching of moderate power levels. Its lead-free, RoHS-compliant status also makes it environmentally friendly. Overall, the IRFZ24NPBF is valued for its balance of performance, cost, and ease of use in a wide variety of electronic applications.
Equivalent
1. STP55NF06 By STMicroelectronics, similar voltage and current ratings.
2. FQP30N06L: By ON Semiconductor, with comparable specifications.
3. IRFZ44N: By Vishay, higher current capacity but similar in application.
4. BUZ11: By Infineon, similar electrical characteristics.
These alternatives may have slight variations, so always check the datasheet to ensure compatibility with your specific application.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 55V and can handle a continuous drain current (I_D) of up to 17A.
2. Low On-State Resistance: The MOSFET features a low R_DS(on) of around 0.060 ohms, which ensures minimal power loss and high efficiency.
3. Fast Switching: It offers fast switching speeds, making it suitable for applications requiring high-frequency operations.
4. Rugged Construction: The device is designed to be robust and reliable, with avalanche energy rated capability.
5. Thermal Performance: The TO-220 package helps in efficient heat dissipation, supporting its high-power applications.
6. Applications: Commonly used in power management, motor control, load switching, and DC-DC converters.
These features make the IRFZ24NPBF ideal for applications where efficiency, reliability, and performance are critical.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can switch the MOSFET on or off. The gate controls the flow of current between the drain and the source.
2. Drain (D): This is the pin through which the current enters the MOSFET when it is in the 'on' state. The current flows from the drain to the source.
3. Source (S): This is the pin through which the current exits the MOSFET. It is also the pin connected to the ground reference in most applications.
The IRFZ24NPBF is used in various applications for switching and amplification due to its high efficiency and fast switching characteristics. It is commonly used in power management, motor drives, and other applications requiring efficient voltage control.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Employed in DC motor drivers and controllers.
3. Automotive Systems: Utilized in various vehicular electronic applications owing to its robustness.
4. Inverters and Converters: Integral in DC-AC and DC-DC converter circuits.
5. Relay Replacement: Acts as a solid-state relay for enhancing reliability.
6. LED Drivers: Used in driving high-power LED systems for better power control.
Its characteristics, such as low on-resistance and fast switching, make it suitable for high-efficiency applications.