IRFZ48NPBF

이미지는 참조용입니다.

IRFZ48NPBF

+BOM

MOSFET N-CH 55V 64A TO220AB

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 64A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 14mOhm @ 32A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 81 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1970 pF @ 25 V
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

개요

Description

The IRFZ48NPBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V (Drain-Source, VDSS)
- Current Capacity: 66A (continuous drain current, ID)
- Low On-Resistance: 16mΩ (RDS(on)) at 10V gate drive
- Fast Switching: Suitable for DC-DC converters, motor control, and power management
- Package: TO-220 (through-hole, easy to mount)
It operates with a gate threshold voltage (VGS(th)) of 2–4V and is optimized for low-loss performance in high-current circuits. Common applications include power supplies, inverters, and automotive systems.
Advantages: Robust, cost-effective, and efficient for medium-power switching. Ensure proper heat dissipation due to its 140W power dissipation limit.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRFZ48NPBF (N-channel MOSFET, 55V, 66A, 16mΩ) include:
- IRFZ44NPBF (55V, 49A, 17.5mΩ)
- IRFZ46NPBF (55V, 53A, 16mΩ)
- IRF3205PBF (55V, 110A, 8mΩ)
- STP55NF06L (60V, 55A, 20mΩ)
- FQP55N06L (60V, 55A, 20mΩ)
Check datasheets for exact compatibility in your application.

Features

The IRFZ48NPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 55V (Drain-Source, VDSS)
- Current Rating: 64A (Continuous Drain Current, ID)
- Low On-Resistance: 16mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- Gate-Source Voltage (VGS): ±20V (max)
- Power Dissipation: 140W (TC = 25°C)
- TO-220 Package: Easy to mount with good thermal performance
- Avalanche Energy Rated: Enhances ruggedness
Ideal for power switching, motor control, and DC-DC converters due to its low RDS(on) and high current handling.

Pinout

The IRFZ48NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- 55V Drain-Source Voltage (VDS)
- 64A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 16mΩ @ 10V VGS)
- Fast switching for power applications
Commonly used in DC-DC converters, motor drives, and power switching circuits.

Application

The IRFZ48NPBF, an N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators and DC-DC converters.
2. Motor Control – Driving brushed DC motors in automotive and industrial systems.
3. Inverters – Power conversion in UPS and solar inverters.
4. Amplifiers – Audio and RF amplification circuits.
5. Automotive Systems – Electronic control units (ECUs) and lighting.
Its low on-resistance (RDS(on)) and high current handling (up to 64A) make it suitable for high-efficiency switching applications.

Package

The IRFZ48NPBF is a power MOSFET housed in a TO-220AB package. This through-hole package features three leads (gate, drain, source) and a metal tab for heat dissipation. It is commonly used in power switching applications due to its robust design and ease of mounting on heatsinks. The TO-220AB package is widely recognized for its reliability and thermal performance.

IRFZ48NPBF과 관련된 제품