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IRLL110TRPBF

Name: IRLL110TRPBF
Rating: 4.8 (15 reviews)

+BOM

MOSFET N-CH 100V 1.5A SOT223

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제조업체 부품 #IRLL110TRPBF
데이터시트 IRLL110TRPBF DataSheet
패키지 TO-261-4
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain(Id) @ 25°C	1.5A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4V, 5V
Rds On(Max) @ Id Vgs	540mOhm @ 900mA, 5V
Vgs(th)(Max) @ Id	2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	6.1 nC @ 5 V
Vgs(Max)	±10V
Input Capacitance(Ciss)(Max) @ Vds	250 pF @ 25 V
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223

개요

Description

The IRLL110TRPBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for efficient power management in various applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 3.3A (continuous)
- Low On-Resistance (RDS(on)): 0.27Ω (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Package: SOT-223 (compact, surface-mount)
Applications:
- DC-DC converters
- Motor control
- Power supplies
- Load switching
Its low gate charge and minimal power loss make it suitable for energy-efficient designs. The TRPBF suffix indicates lead-free (RoHS-compliant) packaging.
For detailed specs, refer to the datasheet.

Features

The IRLL110TRPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 20V (V_DSS)
- Current Rating: 3.3A (I_D)
- Low On-Resistance: 60mΩ (R_DS(on) at V_GS = 4.5V)
- Gate Threshold Voltage: 1V (V_GS(th))
- Fast Switching Speed
- Logic-Level Gate Drive (fully enhanced at 4.5V)
- Low Power Loss
- Package: SOT-23 (Surface Mount)
- Applications: Load switching, power management, DC-DC converters
Compact and efficient, it’s ideal for low-voltage, high-efficiency circuits.

Pinout

The IRLL110TRPBF is a N-channel HEXFET Power MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (V_DS)
- 1.8A Continuous Drain Current (I_D)
- Low On-Resistance (R_DS(on) ~ 0.28Ω @ 4.5V V_GS)
- Logic-Level Gate Drive (4.5V threshold)
Applications:
- Low-voltage power switching
- DC-DC converters
- Motor control

Application

The IRLL110TRPBF is a MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Switching Circuits – Load switches, motor drivers.
3. Portable Electronics – Battery-powered devices, power distribution.
4. Automotive Systems – LED lighting, infotainment power control.
5. Industrial Applications – Low-voltage power supplies, control systems.
Its low on-resistance and compact SMD package make it ideal for efficient, space-constrained designs.

Package

The IRLL110TRPBF is a MOSFET in a TO-261AA (SOT-23) surface-mount package. It has three leads and is designed for compact, low-power applications. The package dimensions are approximately 2.9mm x 2.4mm x 1.1mm, making it suitable for space-constrained designs.