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IXFN132N50P3
+BOMMOSFET N-CH 500V 112A SOT227B
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제조업체IXYS 회사
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제조업체 부품 #IXFN132N50P3
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사양
| 속성 | 가치 |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Polar3™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 112A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 66A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 18600 pF @ 25 V |
| Power Dissipation (Max) | 1500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
개요
Description
IXFN132N50P3 is an IXYS/IXFN family N-channel enhancement-mode power MOSFET designed for high-voltage, high-current switching.
Key points:
- Voltage/current: Vds ≈ 500 V; Id around 132 A continuous (rating depends on temperature and cooling).
- Conduction/drive: Rds(on) is in the low tens of milliohms range (value varies with temperature); Vgs rating typically ±20 V (drive around 10–12 V for full conduction).
- Switching: Fast switching capability with suitable dv/dt and avalanche ruggedness for power-converter use.
- Package/thermal: Available in common power packages; requires proper heat sinking and thermal management.
- Applications: Switch-mode power supplies, PFC, DC-DC converters, motor drives, inverters.
Note: Exact numbers (Rds(on), Id at temperature, package type) vary by lot/variant. Consult the latest datasheet for precise electrical specs, safe operating area, and thermal requirements.
Key points:
- Voltage/current: Vds ≈ 500 V; Id around 132 A continuous (rating depends on temperature and cooling).
- Conduction/drive: Rds(on) is in the low tens of milliohms range (value varies with temperature); Vgs rating typically ±20 V (drive around 10–12 V for full conduction).
- Switching: Fast switching capability with suitable dv/dt and avalanche ruggedness for power-converter use.
- Package/thermal: Available in common power packages; requires proper heat sinking and thermal management.
- Applications: Switch-mode power supplies, PFC, DC-DC converters, motor drives, inverters.
Note: Exact numbers (Rds(on), Id at temperature, package type) vary by lot/variant. Consult the latest datasheet for precise electrical specs, safe operating area, and thermal requirements.
Features
IXFN132N50P3 features:
- N-channel enhancement-mode power MOSFET
- 500 V blocking voltage
- 132 A continuous drain current
- Low Rds(on) for reduced conduction losses
- Fast switching with low gate charge
- Robust avalanche energy capability and good dv/dt immunity
- Trench MOSFET technology
- P3 package with favorable thermal performance
- Suitable for high-power switching in SMPS, motor drives, inverters
- RoHS-compliant and lead-free
(Notes: refer to the datasheet for exact electrical specs and conditions.)
- N-channel enhancement-mode power MOSFET
- 500 V blocking voltage
- 132 A continuous drain current
- Low Rds(on) for reduced conduction losses
- Fast switching with low gate charge
- Robust avalanche energy capability and good dv/dt immunity
- Trench MOSFET technology
- P3 package with favorable thermal performance
- Suitable for high-power switching in SMPS, motor drives, inverters
- RoHS-compliant and lead-free
(Notes: refer to the datasheet for exact electrical specs and conditions.)
Pinout
- Pin count: 3 main pins (plus a metal mounting tab).
- Pin functions (typical TO-247 pinout, looking at the front with leads down):
1 = Gate (G) — control terminal
2 = Drain (D) — output terminal (also connected to the metal tab for heatsinking)
3 = Source (S) — return/reference terminal
Device function: IXFN132N50P3 is an N‑channel enhancement‑mode power MOSFET used for high‑voltage, high‑current switching and amplification in power conversion and switching applications.
- Pin functions (typical TO-247 pinout, looking at the front with leads down):
1 = Gate (G) — control terminal
2 = Drain (D) — output terminal (also connected to the metal tab for heatsinking)
3 = Source (S) — return/reference terminal
Device function: IXFN132N50P3 is an N‑channel enhancement‑mode power MOSFET used for high‑voltage, high‑current switching and amplification in power conversion and switching applications.
Manufacturer
Manufacturer: IXYS (IXYS Corporation / IXYS Technologies). IXFN132N50P3 is an IXYS part; IXYS was acquired by Littelfuse in 2018, so the product line now sits under Littelfuse.
What kind of company: IXYS is/was a semiconductor manufacturer specializing in power semiconductors and power-management components (power MOSFETs, IGBTs, diodes, power ICs) for industrial, automotive, renewable-energy, motor-control and power-conversion applications.
What kind of company: IXYS is/was a semiconductor manufacturer specializing in power semiconductors and power-management components (power MOSFETs, IGBTs, diodes, power ICs) for industrial, automotive, renewable-energy, motor-control and power-conversion applications.
Application
IXFN132N50P3 is a high-voltage (500 V), high-current (≈132 A) N-channel MOSFET suitable for switching power electronics. Common applications include:
- Offline and DC-DC switch-mode power supplies and PFC front-ends
- Three-phase motor drives and PWM inverters
- Solar and wind inverters and grid-tied power electronics
- Uninterruptible power supplies (UPS) and energy-storage converters
- Induction heating and welding inverters
- Industrial automation and power electronics drives
- Offline and DC-DC switch-mode power supplies and PFC front-ends
- Three-phase motor drives and PWM inverters
- Solar and wind inverters and grid-tied power electronics
- Uninterruptible power supplies (UPS) and energy-storage converters
- Induction heating and welding inverters
- Industrial automation and power electronics drives
Package
The IXFN132N50P3 is supplied in a TO-247 three-lead through-hole power package (standard TO-247 format).
