K4B4G1646B-HCK0

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K4B4G1646B-HCK0

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사양

속성 가치
EU Ro HS Compliant
ECCN (US) EAR99
Part Status Obsolete
Automotive No
PPAP No
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Mounting Type Surface Mount
Package Width 10
Package Length 13.3
PCB changed 96
Package / Case BGA
Supplier Device Package FBGA
Pin Count 96
Lead Shape Ball
Chip Density (bit) 4G
Number of Bits / Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (M Hz) 1600
DRAM Type DDR3 SDRAM
Organization 256Mx16
Number of Internal Banks 8
Number of Words per Bank 32M
Address Bus Width (bit) 19
Operating Current (m A) 182
Number of I / O Lines (bit) 16
Maximum Access Time (ns) 0.225
Interface Type SSTL_1.5

개요

Description

The K4B4G1646B-HCK0 is a type of DRAM (Dynamic Random-Access Memory) chip produced by Samsung. It is part of the DDR3 SDRAM family, specifically designed for high-performance applications such as computers, servers, and other electronic devices.
Key features include a 4GB capacity with a data rate of 1600 MT/s (megatransfers per second), making it suitable for demanding workloads. The chip operates at a voltage of 1.5V, which contributes to its energy efficiency.
It utilizes a 1x8 (x8) configuration, allowing for high-speed data access and processing. The K4B4G1646B-HCK0 is commonly used in a range of devices, including laptops and desktops, providing enhanced memory performance for multitasking and high-speed applications.
Overall, this DRAM chip is a reliable choice for manufacturers looking to improve system performance while maintaining power efficiency.

Equivalent

The K4B4G1646B-HCK0 chip is a 4Gb DDR3 SDRAM memory module. Equivalent products may include similar density DDR3 SDRAM chips such as K4B4G1646C-HCK0, MT41J256M16HA-125, and H5TQ4G83AFR. When looking for equivalents, ensure compatibility in speed, voltage, and pin configuration. Always consult the manufacturer's datasheet for specific application requirements.

Features

The K4B4G1646B-HCK0 is a 4Gbit (512MB) DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
1. Type: DDR3 SDRAM, which offers higher speed and efficiency compared to previous DDR standards.
2. Density: 4Gb capacity, suitable for various applications, including smartphones, tablets, and other embedded systems.
3. Data Rate: Operates at a data rate of 1600 MT/s, providing fast data transfer.
4. Voltage: Low voltage operation at 1.5V, which helps in energy savings and reduced power consumption.
5. Configuration: Organized as 512M x 16 bits, allowing for efficient data handling.
6. Package: Typically available in a compact FBGA (Fine Pitch Ball Grid Array) package, facilitating space-efficient designs.
7. Temperature Range: Supports a wide temperature range, ensuring reliability in various environments.
These features make the K4B4G1646B-HCK0 suitable for applications that require high-speed memory and energy efficiency.

Pinout

The K4B4G1646B-HCK0 is a DRAM chip from Samsung, specifically a 4Gb (gigabit) DDR3 SDRAM. It features a 78-ball BGA (Ball Grid Array) package, which corresponds to a pin count of 78.
The primary functions of the K4B4G1646B-HCK0 include:
1. Data Storage: It serves as a volatile memory component for storing data temporarily during processing tasks in computing devices.
2. High-Speed Performance: Designed for high-speed data transfer rates, suitable for applications requiring fast memory access.
3. Low Power Consumption: It operates with lower voltage (typically 1.5V) compared to earlier DRAM types, making it energy-efficient.
4. Memory Architecture: It is organized in a 512M x 32 configuration, facilitating efficient data handling in modern electronic systems.
This chip is commonly used in various applications, including servers, laptops, and other consumer electronics.

Manufacturer

The K4B4G1646B-HCK0 is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung Electronics is one of the largest technology companies in the world, specializing in a wide range of electronic products and components, including semiconductors, consumer electronics, and telecommunications devices. The company is renowned for its advanced research and development in the field of memory chips, such as DRAM and NAND flash, which are essential for various applications in computing, mobile devices, and data storage. Samsung's semiconductor division is a key player in the global market, providing essential components to numerous tech companies and contributing significantly to the company’s overall revenue.

Application

The K4B4G1646B-HCK0 is a 4GB DDR3 SDRAM memory module, commonly used in various applications such as:
1. Computers: Enhancing performance in laptops and desktops.
2. Servers: Providing reliable memory for data centers and enterprise environments.
3. Embedded Systems: Supporting memory needs in industrial and automotive applications.
4. Networking Equipment: Used in routers and switches for improved data processing.
5. Consumer Electronics: Found in smart TVs, gaming consoles, and tablets.
Its design caters to efficiency and speed, making it suitable for both high-performance and cost-sensitive applications.

Package

The K4B4G1646B-HCK0 is a DDR3 SDRAM memory chip packaged in a 96-ball FBGA (Fine Ball Grid Array) format. This compact package type is designed for efficient space utilization and thermal performance in various electronic applications.

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