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K4B4G1646B-HCK0
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제조업체삼성전자
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제조업체 부품 #K4B4G1646B-HCK0
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재고2420
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사양
| 속성 | 가치 |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Automotive | No |
| PPAP | No |
| Minimum Operating Supply Voltage (V) | 1.425 |
| Typical Operating Supply Voltage (V) | 1.5 |
| Maximum Operating Supply Voltage (V) | 1.575 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Temperature (°C) | 95 |
| Supplier Temperature Grade | Commercial |
| Mounting Type | Surface Mount |
| Package Width | 10 |
| Package Length | 13.3 |
| PCB changed | 96 |
| Package / Case | BGA |
| Supplier Device Package | FBGA |
| Pin Count | 96 |
| Lead Shape | Ball |
| Chip Density (bit) | 4G |
| Number of Bits / Word (bit) | 16 |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (M Hz) | 1600 |
| DRAM Type | DDR3 SDRAM |
| Organization | 256Mx16 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 32M |
| Address Bus Width (bit) | 19 |
| Operating Current (m A) | 182 |
| Number of I / O Lines (bit) | 16 |
| Maximum Access Time (ns) | 0.225 |
| Interface Type | SSTL_1.5 |
개요
Description
Key features include a 4GB capacity with a data rate of 1600 MT/s (megatransfers per second), making it suitable for demanding workloads. The chip operates at a voltage of 1.5V, which contributes to its energy efficiency.
It utilizes a 1x8 (x8) configuration, allowing for high-speed data access and processing. The K4B4G1646B-HCK0 is commonly used in a range of devices, including laptops and desktops, providing enhanced memory performance for multitasking and high-speed applications.
Overall, this DRAM chip is a reliable choice for manufacturers looking to improve system performance while maintaining power efficiency.
Equivalent
Features
1. Type: DDR3 SDRAM, which offers higher speed and efficiency compared to previous DDR standards.
2. Density: 4Gb capacity, suitable for various applications, including smartphones, tablets, and other embedded systems.
3. Data Rate: Operates at a data rate of 1600 MT/s, providing fast data transfer.
4. Voltage: Low voltage operation at 1.5V, which helps in energy savings and reduced power consumption.
5. Configuration: Organized as 512M x 16 bits, allowing for efficient data handling.
6. Package: Typically available in a compact FBGA (Fine Pitch Ball Grid Array) package, facilitating space-efficient designs.
7. Temperature Range: Supports a wide temperature range, ensuring reliability in various environments.
These features make the K4B4G1646B-HCK0 suitable for applications that require high-speed memory and energy efficiency.
Pinout
The primary functions of the K4B4G1646B-HCK0 include:
1. Data Storage: It serves as a volatile memory component for storing data temporarily during processing tasks in computing devices.
2. High-Speed Performance: Designed for high-speed data transfer rates, suitable for applications requiring fast memory access.
3. Low Power Consumption: It operates with lower voltage (typically 1.5V) compared to earlier DRAM types, making it energy-efficient.
4. Memory Architecture: It is organized in a 512M x 32 configuration, facilitating efficient data handling in modern electronic systems.
This chip is commonly used in various applications, including servers, laptops, and other consumer electronics.
Manufacturer
Application
1. Computers: Enhancing performance in laptops and desktops.
2. Servers: Providing reliable memory for data centers and enterprise environments.
3. Embedded Systems: Supporting memory needs in industrial and automotive applications.
4. Networking Equipment: Used in routers and switches for improved data processing.
5. Consumer Electronics: Found in smart TVs, gaming consoles, and tablets.
Its design caters to efficiency and speed, making it suitable for both high-performance and cost-sensitive applications.