K4B4G1646D-BHMA

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K4B4G1646D-BHMA

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사양

속성 가치
EU Ro HS Supplier Unconfirmed
ECCN (US) EAR99
Part Status Obsolete
HTS 8542.32.00.36
Automotive No
PPAP No
Chip Density (bit) 4G
Number of Bits / Word (bit) 16
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 105
Mounting Type Surface Mount
PCB changed 96
Package / Case BGA
Supplier Device Package FBGA
Pin Count 96
DRAM Type DDR3 SDRAM
Organization 256Mx16
Data Bus Width (bit) 16
Maximum Clock Rate (M Hz) 1866
Number of I / O Lines (bit) 16

개요

Description

K4B4G1646D-BHMA is a model number typically associated with a specific type of DRAM (Dynamic Random Access Memory) chip produced by Samsung. This chip is a part of the DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) family, which is widely used in computing devices such as PCs, laptops, and servers for temporary data storage and quick access to frequently used information. The "4G" in the model number suggests that this chip has a capacity of 4 gigabits (Gb). DDR3 memory is known for its improved performance and lower power consumption compared to its predecessor DDR2, making it a popular choice for efficient computing. The specific coding in the model number, such as "BHMA," typically refers to the chip's specifications, including speed, voltage, and timing. Understanding such specifications is crucial for system builders to ensure compatibility and optimize performance when upgrading or assembling computer systems.

Equivalent

The K4B4G1646D-BHMA is a DRAM chip from Samsung, part of their DDR3 SDRAM lineup. Equivalent products would include DDR3 SDRAM chips from other manufacturers with similar specifications. For instance, you can consider:
1. Hynix H5TQ4G63AFR series
2. Micron MT41J256M16 series
3. SK Hynix H5TQ4G83MFR
These chips should have similar capacity, speed, and voltage specifications, making them suitable equivalents for the K4B4G1646D-BHMA chip.

Features

The K4B4G1646D-BHMA is a 4Gb DDR3 SDRAM memory chip developed by Samsung. Key features include:
1. Density and Organization: The chip offers a density of 4Gb and is organized as 256M x 16 bits.
2. Speed and Performance: It operates at a speed of up to 1600Mbps, providing fast data transfer rates.
3. Voltage: The chip functions at a standard voltage of 1.5V, which is typical for DDR3 memory.
4. Package and Dimensions: It comes in a 78-ball FBGA package, which is compact and suitable for integration into various devices.
5. Temperature Range: It supports an industrial temperature range, making it suitable for use in various environments.
6. Refresh and Power Down Modes: The chip supports auto-refresh and self-refresh modes, contributing to power-saving. It also includes power-down modes to manage energy use effectively.
7. Reliability Features: Error correction code (ECC) support enhances data integrity and reliability.
These features make the K4B4G1646D-BHMA suitable for a wide range of applications, including consumer electronics and industrial systems.

Manufacturer

The K4B4G1646D-BHMA is a DRAM memory chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its diverse range of products and services, including consumer electronics, semiconductors, telecommunications equipment, and more. Samsung Electronics, a subsidiary of Samsung Group, is one of the largest technology companies in the world and a leading manufacturer in the semiconductor industry. The company is well-regarded for its innovation and quality in producing memory chips, smartphones, televisions, and various other electronic devices.

Application

The K4B4G1646D-BHMA is a 4Gb DDR3 SDRAM memory chip commonly used in various electronic applications. Its primary application areas include:
1. Computing Devices: Used in desktops, laptops, and servers to provide efficient and fast memory access.
2. Consumer Electronics: Found in gaming consoles, smart TVs, and set-top boxes to enhance performance and support complex graphics and computations.
3. Networking Equipment: Utilized in routers and switches for handling large amounts of data traffic.
4. Embedded Systems: Applied in automotive electronics and industrial equipment for real-time processing tasks.
5. Mobile Devices: Integrated into smartphones and tablets to improve multitasking and application performance.

Package

The K4B4G1646D-BHMA is a DRAM chip from Samsung, and it typically comes in a standard FBGA (Fine-Pitch Ball Grid Array) package. This type of packaging allows for a compact form factor suitable for high-density memory applications.

Frequently Asked Questions


Q: What is the memory density and organization of the K4B4G1646D-BHMA?
A: This DDR3 SDRAM has a chip density of 4Gbit, organized as 256Mx16 (256 Megawords by 16 bits).


Q: What is the maximum operating clock rate for this component?
A: It supports a maximum clock rate of 1866 MHz, suitable for high-speed data transfer in DDR3 applications.


Q: Can this IC be used in automotive applications?
A: No, it is not rated for automotive use, as the PPAP and Automotive parameters are both marked as "No."


Q: What is the operating temperature range of the K4B4G1646D-BHMA?
A: It operates from -40°C to +105°C, making it suitable for industrial temperature range applications.


Q: What package type does this DDR3 SDRAM use?
A: It is supplied in a 96-pin FBGA (Fine-Pitch Ball Grid Array) package for surface mount assembly.


Q: Is this part still in active production?
A: No, the part status is listed as "Obsolete," so it may be limited to existing stock or end-of-life purchases.


Q: What is the data bus width of this memory component?
A: The data bus width is 16 bits, with 16 I/O lines, ideal for applications requiring a x16 memory interface.


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