L6386ED013TR

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L6386ED013TR

+BOM

IC GATE DRVR HALF-BRIDGE 14SO

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 17V (Max)
LogicVoltage-VILVIH 1.5V, 3.6V
Current-PeakOutput(SourceSink) 400mA, 650mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 50ns, 30ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 14-SOIC (0.154, 3.90mm Width)

개요

Description

The L6386ED013TR is a high-voltage gate driver integrated circuit (IC) designed for managing and driving power MOSFETs and IGBTs in half-bridge configurations. Manufactured by STMicroelectronics, this IC is commonly used in applications such as motor drivers, power supplies, and other systems requiring efficient power management.
Key features of the L6386ED013TR include:
- High Voltage Tolerance: Can handle significant voltage differences, which is crucial for power electronics applications.
- Floating Channels: Provides the capability to drive high-side and low-side switches effectively.
- Under-Voltage Lockout (UVLO): Protects the system by shutting down the device if the voltage drops below a certain threshold.
- Bootstrap Capability: Simplifies the power supply design by allowing the use of a bootstrap capacitor.
- Low Output Impedance: Ensures efficient switching performance by reducing losses.
The L6386ED013TR is packaged to facilitate easy integration into circuit designs, making it a versatile choice for optimizing the efficiency and performance of power electronics systems.

Equivalent

The L6386ED013TR is a high-voltage gate driver IC commonly used in power electronics applications. Equivalent products include:
1. IR2110 from Infineon Technologies
2. FAN7392 from ON Semiconductor
3. MIC4427 from Microchip Technology
4. UCC27714 from Texas Instruments
These alternatives offer similar functionalities such as high-side and low-side gate driving, although specific parameters like voltage ratings and package types might vary. Always check the datasheets for compatibility with your application requirements.

Features

The L6386ED013TR is a high-voltage, high-speed gate driver IC designed for MOSFETs and IGBTs. Key features include:
1. High Voltage: Can handle up to 600V, providing robustness for demanding applications.
2. High-Speed Operation: Fast switching capabilities to improve efficiency and reduce power loss.
3. Bootstrap Diode: Integrated bootstrap diode simplifies the design and reduces component count.
4. Under-voltage Lockout (UVLO): Ensures the device operates safely by preventing it from turning on below specified voltage levels.
5. Floating Channel: Allows high-side configurations with voltage levels of the bootstrap capacitor.
6. Output Stage: Capable of delivering up to 400 mA source and 650 mA sink peak current.
7. Compatibility: Suitable for half-bridge, full-bridge, and three-phase bridge configurations.
8. Temperature Range: Operates within an industrial range, typically from -40°C to 125°C.
These features make the L6386ED013TR suitable for a wide range of industrial and consumer applications, including motor control and power conversion systems.

Pinout

The L6386ED013TR is a high-voltage gate driver IC from STMicroelectronics, designed primarily for driving power MOSFETs and IGBTs. It typically comes in a 14-pin SOIC package. The key functions of the L6386ED013TR include:
1. High-Side and Low-Side Driver: It can drive both high-side and low-side power devices, making it suitable for half-bridge configurations.
2. High Voltage Capability: It is capable of handling high voltages, suitable for use in applications with high voltage requirements.
3. Interlocking Function: Includes a built-in interlocking function to prevent both outputs from being high at the same time, which helps avoid shoot-through conditions.
4. Under-Voltage Lockout (UVLO): Provides UVLO protection for both high-side and low-side sections to prevent operation under insufficient voltage conditions.
5. Bootstrap Operation: Supports bootstrap operation for the high-side driver, enabling simple and reliable gate drive.
This combination of features makes the L6386ED013TR suitable for various power conversion applications, such as motor drives and power inverters. For detailed specifications, refer to the datasheet provided by STMicroelectronics.

Manufacturer

The L6386ED013TR is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products and solutions. The company serves various sectors, including automotive, industrial, personal electronics, and communications equipment. Known for its innovation in semiconductor technologies, STMicroelectronics provides solutions that enable smarter driving, smarter homes and cities, and the next generation of mobile and Internet of Things (IoT) devices.

Application

The L6386ED013TR is a high-voltage gate driver designed for various applications requiring efficient management of power MOSFETs or IGBTs. Key application areas include:
1. Motor Control: Used in driving motors in industrial and consumer electronics, offering precise control over motor speed and torque.
2. Switch Mode Power Supplies (SMPS): Facilitates efficient energy conversion in power supply units by driving power transistors.
3. Lighting Systems: Supports the control of high-intensity discharge (HID) and LED lighting, providing efficient energy use and longevity.
4. Inductive Loads: Suitable for applications involving control of inductive loads like solenoids and transformers.
Its high-voltage performance and robustness make it ideal for these demanding applications.

Package

The L6386ED013TR is an IC driver from STMicroelectronics, typically used for driving power MOSFETs or IGBTs. It comes in an SOIC-8 package, which is a small outline integrated circuit package with 8 pins. This type of package is commonly used for surface mounting on printed circuit boards.

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