MT29F8G08ADADAH4-IT:D

이미지는 참조용입니다.

MT29F8G08ADADAH4-IT:D

+BOM

IC FLASH 8GBIT PARALLEL 63VFBGA

  • 제조업체미광과학기술주식유한회사.

  • 제조업체 부품 #MT29F8G08ADADAH4-IT:D

  • 재고5180

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Part Status Last Time Buy
Base Product Number MT29F8G08
Digi Key Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

개요

Description

The MT29F8G08ADADAH4-IT:D is a NAND Flash memory chip produced by Micron Technology. It is utilized for non-volatile data storage, meaning it retains information even when power is not supplied. This specific model is an 8Gb (gigabit) chip, organized into pages and blocks, allowing for efficient data management and retrieval.
Key features of the MT29F8G08ADADAH4-IT:D include:
1. Architecture: It uses a multi-level cell (MLC) technology, enabling each cell to store more than one bit of information, increasing storage capacity.

2. Interface: The chip interfaces using an asynchronous I/O protocol, which is common in NAND flash applications for its simplicity and reliability.
3. Performance: It offers fast read and write speeds, suitable for applications requiring quick access to data.
4. Reliability: It includes error correction code (ECC) support, enhancing data integrity by detecting and correcting errors that may occur during data storage or retrieval.
5. Temperature Range: The "IT" in its name indicates it is rated for industrial temperature ranges, making it suitable for applications in harsher environments.
The MT29F8G08ADADAH4-IT:D is used in a variety of electronics, including consumer devices, industrial systems, and automotive applications, providing robust storage solutions.

Equivalent

The MT29F8G08ADADAH4-IT:D is an 8Gb NAND Flash chip by Micron. Equivalent products may include the K9G8G08U0M by Samsung, the TH58TEG8DDJBA8C by Toshiba (now Kioxia), and the H27U8G8M2CTR by SK Hynix. These alternatives are similar in terms of architecture and capacity, but always verify specific features like package type, voltage requirements, and memory interface compatibility, as these can vary even among similar products.

Features

The MT29F8G08ADADAH4-IT:D is an 8 Gb NAND flash memory chip designed by Micron Technology. It features a single-level cell (SLC) architecture, which enhances endurance and performance compared to multi-level cell (MLC) and triple-level cell (TLC) technologies. The device is organized as 1,024 blocks, with each block containing 64 programmable pages. Each page is 2,112 bytes, comprising 2,048 bytes of data and 64 bytes of spare area.
Notable features include:
- A 3.3V voltage supply, ensuring low power consumption.
- Support for ONFI 1.0 interface, which standardizes command sets for enhanced compatibility.
- Fast read access time and high data transfer rates, suitable for applications requiring rapid data processing.
- Endurance of up to 100,000 program/erase cycles, making it reliable for industrial applications.
- Operating temperature range of -40°C to 85°C, which is ideal for industrial and extended temperature environments.
These features make the MT29F8G08ADADAH4-IT:D well-suited for use in embedded systems, industrial applications, and other demanding environments where performance and reliability are critical.

Pinout

The MT29F8G08ADADAH4-IT:D is an 8Gb (gigabit) NAND flash memory chip produced by Micron Technology. It typically comes in a standard TSOP (Thin Small Outline Package) or similar package with 48 pins.
Here is a concise overview of its pin functions:
1. Data I/O Pins (DQ0-DQ7): These 8 pins are used for data input and output.
2. Address Latch Enable (ALE): Used to latch address inputs.
3. Command Latch Enable (CLE): Used to latch command inputs.
4. Chip Enable (CE#): Activates the chip when low.
5. Read Enable (RE#): Controls the data output buffers.
6. Write Enable (WE#): Controls the data input buffers and latches commands/addresses.
7. Write Protect (WP#): Protects against inadvertent writes or erases.
8. Ready/Busy (R/B#): Indicates the device status.
9. VCC and VSS: Power supply and ground pins.
10. Other Pins: Include spare and no-connect pins.
This configuration allows the chip to interface with a controller for reading, writing, and erasing data in flash storage applications. For precise details, always refer to the specific datasheet provided by Micron.

Manufacturer

The MT29F8G08ADADAH4-IT:D is manufactured by Micron Technology, Inc. Micron is a leading global corporation specializing in memory and storage solutions. The company develops and produces a wide array of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and other innovative memory technologies. Micron's products are utilized in various applications such as computing, networking, automotive, industrial, and mobile devices.
Founded in 1978 and headquartered in Boise, Idaho, Micron has established itself as a prominent player in the semiconductor industry. It is known for its focus on innovation and advanced technology development, often pushing the boundaries of what's possible in memory and storage capabilities. Micron's operations span globally, with numerous manufacturing and research facilities worldwide, highlighting its commitment to meeting the diverse needs of its customers through cutting-edge solutions and reliable performance.

Application

The MT29F8G08ADADAH4-IT:D is an 8Gb NAND Flash memory chip from Micron. Its application areas include consumer electronics, industrial controls, automotive systems, and enterprise storage solutions. It is utilized in devices that require reliable data storage and high-speed data access. Common applications involve solid-state drives (SSDs), USB drives, memory cards, and embedded systems. Its features, such as endurance and operational temperature range, make it suitable for devices operating in harsh environmental conditions or requiring high endurance and longevity.

Package

The MT29F8G08ADADAH4-IT:D is a NAND Flash memory package from Micron. It is typically offered in a TSOP (Thin Small Outline Package) type. This package type is designed for efficient space utilization and is commonly used in various electronic applications requiring non-volatile storage.

Frequently Asked Questions


Q: What is the memory density and organization of this NAND Flash?
A: It has 8Gbit density organized as 1G x 8 bits, suitable for high-density data storage.


Q: Is this device compatible with parallel NAND interfaces?
A: Yes, it uses a Parallel memory interface, ideal for legacy embedded systems and SoC designs.


Q: What is the operating temperature range for this part?
A: It operates from -40°C to 85°C (TA), supporting industrial-grade environments.


Q: What voltage supply is required for this NAND Flash?
A: It requires a single supply voltage between 2.7V and 3.6V, standard for 3V NAND systems.


Q: Is this component lead-free and RoHS compliant?
A: RoHS status is not specified; please verify with the manufacturer for current compliance data.


Q: Can this A-die NAND handle high-temperature soldering processes?
A: Yes, as a surface-mount component in VFBGA package, it supports standard reflow soldering profiles.


Q: Is this device suitable for automotive or harsh industrial applications?
A: Its -40°C to 85°C rating makes it suitable for industrial use, but not AEC-Q100 qualified.


MT29F8G08ADADAH4-IT:D과 관련된 제품