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MT40A256M16LY-062E:F

Name: MT40A256M16LY-062E:F
Rating: 4.8 (15 reviews)

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IC DRAM 4GBIT PARALLEL 96FBGA

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제조업체 부품 #MT40A256M16LY-062E:F
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사양

속성	가치
Part Status	Obsolete
Base Product Number	MT40A256M16
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR4
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	1.6 GHz
Voltage - Supply	1.14V ~ 1.26V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package / Case	96-TFBGA
Supplier Device Package	96-FBGA (7.5x13.5)
Packaging	Tray
Access Time	13.75 ns

개요

Description

The MT40A256M16LY-062E:F is a DRAM (Dynamic Random Access Memory) chip from Micron Technology, designed for high-performance and power-efficient computing applications. It belongs to Micron's DDR4 SDRAM series, which is known for offering improved speed, capacity, and energy efficiency compared to previous generations. This specific model features a density of 256 Megabits organized as 16 Meg x 16 bits, making it suitable for applications requiring substantial memory bandwidth.
The "062E" in the part number typically refers to the speed grade and voltage binning, with this variant being optimized for a balance between speed and power consumption. The "F" at the end of the part number denotes specific package and revision details.
DDR4 memory like the MT40A256M16LY-062E:F is commonly used in servers, desktops, and laptops, where high data rates and low power usage are crucial. It supports data transfer rates up to 3200 MT/s (megatransfers per second) and features enhancements such as improved burst performance and reduced refresh intervals, contributing to overall system efficiency.

Equivalent

The MT40A256M16LY-062E:F is a DDR4 SDRAM chip by Micron. Equivalent products include similar DDR4 SDRAM chips from other manufacturers like Samsung's K4A8G165WB-BCRC, SK Hynix's H5AN8G8NCJ-VKC, and Kingston's D4S8G16FS. These chips typically have similar specifications such as capacity, speed, and form factor, but it's important to verify compatibility based on specific application requirements.

Features

The MT40A256M16LY-062E:F is a DRAM module that is part of the DDR4 SDRAM family. It is designed to provide high-speed data processing and storage capabilities. Some of its key features include:
1. Density and Configuration: The module has a density of 4Gb (gigabits) and is organized as 256 Megabits x 16, enabling efficient data handling.
2. Speed and Bandwidth: It supports a data rate of up to 3200 MT/s (megatransfers per second), allowing for fast data transfer and improved performance in computing applications.
3. Voltage: Operates at a low voltage of 1.2V, which helps in reducing power consumption and heat generation, making it suitable for energy-efficient systems.
4. Package and Form Factor: Comes in a compact FBGA (Fine-Pitch Ball Grid Array) package, making it suitable for integration into various devices with space constraints.
5. Features: Includes on-die termination (ODT), an internal self-refresh mechanism, and a programmable mode register for configuring various performance options.
These features make it suitable for a wide range of applications, including computing, networking, and consumer electronics.

Pinout

The MT40A256M16LY-062E:F is a DRAM component from Micron Technology, specifically a DDR4 SDRAM. It features a total of 96 pins. The primary function of this component is to provide high-speed, volatile memory for computing devices, offering a storage capacity of 16 Gigabits (2GB) arranged in a 256 Meg x 16 configuration. It operates at a data rate of DDR4-2400, with a nominal voltage of 1.2V.
Key functions include supporting high-speed data transfer rates for efficient processing, and it is typically used in applications such as PCs, laptops, and servers where rapid data retrieval and storage are necessary. The component supports features like bank group architecture, which allows for improved performance by enabling more simultaneous operations, and on-die termination for signal integrity. Additionally, it includes standard DDR4 features like programmable CAS (Column Address Strobe) latency, burst length, and prefetch.

Manufacturer

The MT40A256M16LY-062E:F is manufactured by Micron Technology, Inc. Micron is a leading American multinational corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. This includes dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor components. The company is recognized for its innovations in memory technology, which are crucial for a wide range of electronic devices, including computers, mobile phones, and data centers. Micron plays a significant role in the global semiconductor industry and is known for its cutting-edge research and development efforts, aiming to meet the increasing demand for high-performance and reliable memory solutions.

Application

The MT40A256M16LY-062E:F is a DRAM memory component primarily used in applications requiring high-speed data processing and storage. Key application areas include computing systems, such as servers and workstations, where large memory capacities and fast access times are crucial. It is also used in networking equipment for buffering and caching, as well as in telecommunications systems for handling data traffic. Additionally, this DRAM is suitable for use in advanced consumer electronics, like gaming consoles and high-performance laptops, that demand rapid data retrieval and processing capabilities. The component is designed for environments that require reliability and efficiency in memory-intensive applications.

Package

The MT40A256M16LY-062E:F is a DRAM chip in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This type of package is commonly used for high-density memory components, providing efficient heat dissipation and a compact form factor suitable for embedded applications.

Frequently Asked Questions

Q: What is the peak data transfer rate of this DDR4 SDRAM?
A: With a 1.6 GHz clock frequency and 16-bit I/O, the peak transfer rate is 3.2 Gbps per pin, or 6.4 GB/s per device.

Q: Is this memory compatible with standard DDR4 voltage rails?
A: Yes, it operates within the standard DDR4 VDD range of 1.14V to 1.26V, compliant with JEDEC specifications.

Q: What is the CAS latency (CL) equivalent for the 13.75 ns access time?
A: At 1.6 GHz (0.625 ns cycle), the 13.75 ns access time corresponds to a CAS latency of approximately 22 clock cycles (CL22).

Q: What applications is this component suitable for?
A: It is ideal for high-performance computing, servers, networking equipment, and embedded systems requiring 4Gb density with low power consumption.

Q: Can this device operate under extended temperature conditions?
A: Yes, it supports an operating temperature range of 0°C to 95°C (TC), suitable for industrial and thermally demanding environments.

Q: What is the physical package and mounting type?
A: It uses a 96-ball TFBGA (7.5x13.5mm) package, designed for surface-mount assembly, commonly used in space-constrained designs.