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MT41K128M8DA-107:J

Name: MT41K128M8DA-107:J
Rating: 4.8 (15 reviews)

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IC DRAM 1GBIT PAR 78FBGA

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제조업체 부품 #MT41K128M8DA-107:J
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사양

속성	가치
Part Status	Last Time Buy
Base Product Number	MT41K128M8
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3L
Memory Size	1Gbit
Memory Organization	128M x 8
Memory Interface	Parallel
Clock Frequency	933 MHz
Voltage - Supply	1.283V ~ 1.45V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package / Case	78-TFBGA
Supplier Device Package	78-FBGA (8x10.5)
Packaging	Tray
Access Time	20 ns

개요

Description

The MT41K128M8DA-107:J is a DRAM (Dynamic Random-Access Memory) component, specifically a DDR3 (Double Data Rate 3) SDRAM chip, designed by Micron Technology. It offers high-speed memory access and is typically used in a variety of computing applications, including personal computers, servers, and embedded systems.
Key features of this chip include:
- Density: 1 Gigabit, organized as 128 Meg x 8 bits.
- Speed: Operates at a clock speed of up to 933 MHz, providing data transfer rates of up to 1866 MT/s (million transfers per second).
- Package: Comes in a standard JEDEC-compliant FBGA (Fine-Pitch Ball Grid Array) package, ensuring compatibility with various motherboard designs.
- Operating Voltage: Designed for 1.5V operation, contributing to lower power consumption compared to previous DDR2 standards.
- Temperature Range: Suitable for a wide range of operating temperatures, making it versatile for different environments.
This chip's high performance and low power consumption make it suitable for modern high-performance and energy-efficient applications.

Equivalent

The MT41K128M8DA-107:J is a DDR3L SDRAM chip from Micron Technology. Equivalent products include:
1. Samsung K4B4G0846D - DDR3L SDRAM with similar specifications.
2. Hynix H5TC4G83CFR - Offers comparable performance and features.
3. Nanya NT5CB128M8CN-CG - Another alternative with similar characteristics.
4. Kingston D2516EC4BXGGB - Matches the performance metrics for DDR3L SDRAM.
Ensure compatibility with your specific device requirements when selecting an equivalent.

Features

The MT41K128M8DA-107:J is a DRAM (Dynamic Random-Access Memory) chip from Micron Technology, specifically a part of their DDR3 SDRAM series. Key features of this memory module include:
1. Density and Organization: It has a capacity of 1Gb (Gigabit) and is organized as 128 Meg x 8 bits.
2. Data Rate and Speed: It supports data rates of up to DDR3-2133, with a clock speed of 1066 MHz (frequency).
3. Voltage: Operates at a voltage of 1.5V, which is standard for DDR3 memory.
4. Package Type: The DRAM comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package.
5. CAS Latency: Features a CAS (Column Address Strobe) latency of 7, 8, 9, 10, or 11, which determines the delay time between the read command and the availability of data.
6. Temperature Range: Designed to operate in a temperature range suitable for standard consumer electronics.
These features make it suitable for a wide range of applications, including personal computers and consumer electronics, where high-speed data access and processing are required.

Pinout

The MT41K128M8DA-107:J is a DRAM chip from the DDR3 SDRAM family, manufactured by Micron Technology. It features a 96-ball FBGA (Fine Ball Grid Array) package. This memory chip is organized as 16 Meg x 8 x 8 banks.
Key functions and features include:
1. Data Transfer Rate: Operates at DDR3 speeds, supporting data rates up to 1866 MT/s depending on the specific device speed grade.
2. Voltage: Operates at a standard voltage of 1.5V.
3. Density and Configuration: With a total density of 1 Gigabit, it is configured as 128 Meg x 8 bits.
4. Bank Architecture: Utilizes an 8-bank architecture for improved performance and efficiency.
5. Applications: Suitable for a wide range of applications including computing devices, networking equipment, and consumer electronics.
For precise pin functions such as address, data, and control signals, refer to the device datasheet or technical manual provided by Micron. The specific pinout in the ball grid array might include functions such as power, ground, data input/output, clock signals, and command signals.

Manufacturer

The MT41K128M8DA-107:J is manufactured by Micron Technology, Inc. Micron is a leading global semiconductor company specializing in memory and storage solutions. They produce a wide range of products, including dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. Micron's products are used in various applications, from personal electronics to data centers and automotive systems. The company is known for its innovation in memory technology and plays a crucial role in the development of advanced computing solutions.

Application

The MT41K128M8DA-107:J is a DRAM memory chip commonly used in various electronic applications. Its typical application areas include:
1. Computing: Used in desktops, laptops, and servers for efficient data processing and multitasking capabilities.
2. Consumer Electronics: Integrated into devices like gaming consoles, smart TVs, and home entertainment systems to enhance performance.
3. Networking: Supports routers, switches, and other networking equipment for faster data transmission.
4. Automotive: Deployed in advanced driver-assistance systems (ADAS) and infotainment systems for better functionality and reliability.
5. Industrial: Employed in automation systems and industrial controls for robust operations.
These applications leverage the chip’s high-speed data handling and low power consumption characteristics.

Package

The MT41K128M8DA-107:J is a DRAM memory chip from Micron, specifically a DDR3L SDRAM. Its package type is an FBGA (Fine-Pitch Ball Grid Array), which is commonly used for semiconductor devices due to its reliable connections and compact size, making it suitable for high-density applications.

Frequently Asked Questions

Q: What is the maximum operating frequency of this DDR3L SDRAM?
A: The MT41K128M8DA-107:J supports a maximum clock frequency of 933 MHz, corresponding to a DDR3L-1866 data rate.

Q: What is the supply voltage range for this device?
A: It operates at a low voltage range of 1.283V to 1.45V, compliant with the DDR3L (1.35V) standard for power efficiency.

Q: Is this memory component suitable for industrial temperature applications?
A: No, its operating temperature range is 0°C to 95°C (TC), making it suitable for commercial or extended temperature environments, not industrial (-40°C to 85°C).

Q: What is the access time for a typical read operation?
A: The access time is rated at 20 ns, ensuring reliable data retrieval within the specified timing parameters.

Q: What is the standard mounting and packaging type for this component?
A: It comes in a 78-ball TFBGA (Thin Fine-Pitch Ball Grid Array) surface-mount package, supplied in a tray format.

Q: How is the memory internally organized?
A: The device has a memory organization of 128M x 8 bits, providing a total storage capacity of 1 Gbit (128 MB).