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MT47H64M8SH-25E:H

Name: MT47H64M8SH-25E:H
Rating: 4.8 (15 reviews)

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IC DRAM 512MBIT PARALLEL 60FBGA

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제조업체 부품 #MT47H64M8SH-25E:H
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사양

속성	가치
Part Status	Last Time Buy
Base Product Number	MT47H64M8
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR2
Memory Size	512Mbit
Memory Organization	64M x 8
Memory Interface	Parallel
Clock Frequency	400 MHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 85°C (TC)
Mounting Type	Surface Mount
Package / Case	60-TFBGA
Supplier Device Package	60-FBGA (8x10)
Packaging	Bulk
Access Time	400 ps

개요

Description

The MT47H64M8SH-25E:H is a DRAM component, specifically a 512Mb DDR2 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Micron Technology. It is organized into 64M x 8 bits, meaning it has a total capacity of 512 Megabits. This particular model operates at a clock speed that supports high-speed data transfer rates, typically up to 800 MT/s (megatransfers per second), and is commonly used in computing applications requiring efficient memory performance, such as in personal computers, servers, and embedded systems.
The "25E:H" in the part number refers to specific characteristics of the chip, including its speed grade and package type. The DDR2 technology provides improvements over its predecessor, DDR SDRAM, by offering faster performance and reduced power consumption, achieved through features like increased prefetch length and improved electrical interface. The chip is designed to work with a 1.8V power supply, enhancing its energy efficiency. The MT47H64M8SH-25E:H is typically integrated into larger memory modules like DIMMs (Dual Inline Memory Modules) used in various electronic devices.

Equivalent

The MT47H64M8SH-25E:H is a 512Mb DDR2 SDRAM chip by Micron. Equivalent products could include DDR2 SDRAM chips with similar specifications from other manufacturers, such as:
1. Hynix HY5PS1G1631C
2. Samsung K4T51083QB
3. Nanya NT5TU64M8DE
These alternatives should have similar memory size, speed, and voltage requirements. Always verify specific compatibility and performance requirements for your application.

Features

The MT47H64M8SH-25E:H is a DDR2 SDRAM memory component by Micron Technology. It features a 512Mb (megabit) density organized as 64M x 8 bits. The chip operates at a supply voltage of 1.8V and supports data rates up to 800 MT/s (megatransfers per second). It is designed for high-speed performance and efficiency, utilizing an 8n-prefetch architecture.
Key features include:
- CAS Latency (CL) options of 3, 4, 5, or 6, allowing flexibility in performance tuning.
- Burst lengths of 4 and 8 for data transfer optimization.
- On-die termination for improved signal integrity.
- An auto-refresh mode that supports a self-refresh option for power savings.
- Programmable output drive strength helping to optimize signal quality.
- Operating temperature ranges from 0°C to 85°C, suitable for various applications.
The component is commonly used in applications such as computing and consumer electronics, where high-speed data processing and reliability are essential.

Pinout

The MT47H64M8SH-25E:H is a DRAM component from Micron's DDR2 SDRAM series. It is organized as a 64M x 8 configuration. The device utilizes a 60-ball Fine-Pitch Ball Grid Array (FBGA) package.
In terms of functionality, this DDR2 SDRAM module is used for providing high-speed data storage and retrieval with enhanced bandwidth. It operates with a supply voltage of 1.8V and supports data rates up to 800 MT/s (megatransfers per second). DDR2 technology allows for increased performance compared to its predecessor, DDR, by offering faster clock speeds and improved electrical characteristics.
The pin functions include data (DQ) pins, address (A) pins, control signals such as clock (CK), clock enable (CKE), chip select (CS#), row address strobe (RAS#), column address strobe (CAS#), and write enable (WE#), along with power supply (VDD, VDDQ) and ground (VSS, VSSQ) connections. This configuration allows for efficient and high-speed communication with memory controllers in computing applications.

Manufacturer

The MT47H64M8SH-25E:H is a DRAM (Dynamic Random-Access Memory) chip manufactured by Micron Technology, Inc. Micron is a leading global semiconductor company that specializes in memory and storage solutions. The company produces a wide array of products, including DRAM, NAND flash memory, and other semiconductor devices that are essential components in a range of electronic applications. These applications span from personal computing and mobile devices to enterprise-level data centers and automotive systems.
Founded in 1978 and headquartered in Boise, Idaho, Micron has established itself as a major player in the technology industry. The company is known for its innovation and contribution to the advancement of memory technology, catering to both consumer markets and specialized technology sectors. Through its extensive research and development efforts, Micron continues to drive forward improvements in memory performance, efficiency, and capacity, keeping pace with the rapidly evolving demands of the digital age.

Application

The MT47H64M8SH-25E:H is a DRAM memory module commonly used in various applications requiring fast and reliable memory storage. Key application areas include:
1. Computing Systems: Desktops, laptops, and servers for efficient data processing and multitasking.
2. Consumer Electronics: Devices such as smart TVs, gaming consoles, and digital cameras.
3. Networking Equipment: Routers and switches for managing data traffic.
4. Telecommunications: Infrastructure equipment needing rapid data access.
5. Industrial Automation: Systems requiring reliable memory for controlling operations.
6. Automotive Electronics: Infotainment systems and advanced driver-assistance systems (ADAS).
These applications benefit from the module's speed and efficiency in handling memory-intensive tasks.

Package

The MT47H64M8SH-25E:H is a DRAM chip from Micron Technology, typically packaged in a standard FBGA (Fine-Pitch Ball Grid Array) form. This package type offers a compact design suitable for efficient heat dissipation and reliable connections, commonly used in electronic devices requiring high-density memory solutions.

Frequently Asked Questions

Q: What is the memory type and organization of this MT47H64M8SH?
A: It is a volatile DDR2 SDRAM with 512Mbit capacity organized as 64M x 8, using a parallel interface.

Q: What is the maximum clock frequency and access time?
A: It supports a clock frequency of 400 MHz, with an access time of 400 ps (0.4 ns).

Q: What voltage supply range does this component require?
A: It requires a supply voltage between 1.7V and 1.9V, making it suitable for low-power DDR2 applications.

Q: What is the operating temperature range for this DDR2 device?
A: It operates from 0°C to 85°C (TC case temperature), ensuring reliable performance in standard industrial environments.

Q: What is the write cycle time for word or page operations?
A: The write cycle time for word or page is 15 ns, enabling efficient data programming.

Q: Which package does this part come in for surface mounting?
A: It is housed in a 60-TFBGA package with supplier device package 60-FBGA (8x10 mm), suitable for surface mount assembly.

Q: Is this part fully RoHS compliant and programmable via DigiKey?
A: RoHS and lifecycle status are not specified; DigiKey programmable is noted as "Not Verified", so confirm current compliance before ordering.

Q: What is the part status, and is it recommended for new designs?
A: The part status is "Last Time Buy", meaning it is not recommended for new designs; plan for end-of-life across existing products.