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IC DRAM 576MBIT PARALLEL 144FBGA
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제조업체미광과학기술주식유한회사.
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제조업체 부품 #MT49H32M18CSJ-18:B
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM |
| Memory Size | 576Mbit |
| Memory Organization | 32M x 18 |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TFBGA |
| Supplier Device Package | 144-FBGA (18.5x11) |
| Base Product Number | MT49H32M18 |
| Clock Frequency | 533 MHz |
| Access Time | 15 ns |
개요
Description
The MT49H32M18CSJ-18:B is a DDR3 DRAM memory chip produced by Micron Technology. It features a 32-bit wide data bus and is organized as 4Gb (gigabits) of memory, which is equivalent to 512MB (megabytes). The chip operates at a data rate of 1600 MT/s (million transfers per second) and is designed for low-power applications, making it suitable for mobile and embedded devices.
The 'B' designation typically indicates a specific feature set or variant, often related to package type or speed grade. With a supply voltage of 1.35V, it provides improved energy efficiency compared to traditional DDR3 DRAM. This memory component is commonly used in various electronic devices, including smartphones, tablets, and other mobile computing platforms, due to its balance of performance and power efficiency.
The 'B' designation typically indicates a specific feature set or variant, often related to package type or speed grade. With a supply voltage of 1.35V, it provides improved energy efficiency compared to traditional DDR3 DRAM. This memory component is commonly used in various electronic devices, including smartphones, tablets, and other mobile computing platforms, due to its balance of performance and power efficiency.
Equivalent
The MT49H32M18CSJ-18:B chip is a 1Gb DDR3 SDRAM with a 18-bit I/O interface. Equivalent products include:
1. Micron MT41J128M16HA-15
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646D
Ensure compatibility with your specific application, as variations in speed, timings, and voltage may exist. Always consult the datasheet for detailed specifications.
1. Micron MT41J128M16HA-15
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646D
Ensure compatibility with your specific application, as variations in speed, timings, and voltage may exist. Always consult the datasheet for detailed specifications.
Features
The MT49H32M18CSJ-18:B is a DDR3 SDRAM memory chip from Micron Technology, designed for high-performance computing applications. Key features include:
1. Memory Density: 32 Megabytes organized in a configuration of 4 banks, each with 8 bits per bank.
2. Speed: Operates at a clock frequency of 1.5V, providing efficient data transfer rates suitable for various applications.
3. Access Speed: Supports a data rate of 1600 MT/s, facilitating fast read and write operations.
4. Architecture: It utilizes a synchronous interface, ensuring data is synchronized with the clock signal for improved reliability.
5. Package Type: Housed in a compact FBGA (Fine Ball Grid Array) package, optimizing space in electronic designs.
6. Power Efficiency: Designed for low power consumption, making it suitable for battery-operated devices and reducing heat generation.
Overall, the MT49H32M18CSJ-18:B is ideal for applications requiring reliable and efficient memory performance, such as embedded systems and consumer electronics.
1. Memory Density: 32 Megabytes organized in a configuration of 4 banks, each with 8 bits per bank.
2. Speed: Operates at a clock frequency of 1.5V, providing efficient data transfer rates suitable for various applications.
3. Access Speed: Supports a data rate of 1600 MT/s, facilitating fast read and write operations.
4. Architecture: It utilizes a synchronous interface, ensuring data is synchronized with the clock signal for improved reliability.
5. Package Type: Housed in a compact FBGA (Fine Ball Grid Array) package, optimizing space in electronic designs.
6. Power Efficiency: Designed for low power consumption, making it suitable for battery-operated devices and reducing heat generation.
Overall, the MT49H32M18CSJ-18:B is ideal for applications requiring reliable and efficient memory performance, such as embedded systems and consumer electronics.
Pinout
The MT49H32M18CSJ-18:B is a DRAM chip from Micron Technology. It features a 78-ball BGA (Ball Grid Array) package with a pin count of 78.
The main functions of the MT49H32M18CSJ-18:B include:
1. Memory Storage: It provides dynamic random-access memory (DRAM) storage for applications requiring high performance and density.
2. Data Rate: It supports high-speed data transfer rates, ideal for mobile and portable devices.
3. Low Power Consumption: Designed for low power usage, making it suitable for battery-operated devices.
4. Interface: It operates with a mobile DDR (DDR2) interface, facilitating efficient communication with the host system.
This chip is typically used in smartphones, tablets, and other mobile computing devices due to its compact size and efficiency.
The main functions of the MT49H32M18CSJ-18:B include:
1. Memory Storage: It provides dynamic random-access memory (DRAM) storage for applications requiring high performance and density.
2. Data Rate: It supports high-speed data transfer rates, ideal for mobile and portable devices.
3. Low Power Consumption: Designed for low power usage, making it suitable for battery-operated devices.
4. Interface: It operates with a mobile DDR (DDR2) interface, facilitating efficient communication with the host system.
This chip is typically used in smartphones, tablets, and other mobile computing devices due to its compact size and efficiency.
Manufacturer
The manufacturer of the MT49H32M18CSJ-18:B is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and other related technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a variety of semiconductor products used in a wide range of applications, including computing, mobile devices, consumer electronics, and industrial products. The company is recognized for its innovation in memory technology and plays a significant role in advancing the performance and efficiency of electronic devices. Micron is also known for its commitment to sustainability and responsible manufacturing practices.
Application
The MT49H32M18CSJ-18:B is a DDR3 SDRAM memory chip, primarily used in various applications including consumer electronics, mobile devices, networking equipment, and industrial computing. Its high-density configuration and efficient performance make it suitable for smartphones, tablets, laptops, and servers. Additionally, it can be utilized in automotive infotainment systems, medical devices, and embedded systems where reliable and fast memory access is crucial. The chip's compatibility with various platforms enhances its versatility across multiple sectors.
Package
The MT49H32M18CSJ-18:B is a DRAM memory device packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of packaging provides a compact and efficient design suitable for high-density memory applications.
