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NAND512R3A2SZA6E
+BOMIC FLASH 512MBIT PAR 63VFBGA
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제조업체미광과학기술주식유한회사.
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제조업체 부품 #NAND512R3A2SZA6E
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재고3657
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Base Product Number | NAND512 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 50ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Tray |
| Access Time | 50 ns |
개요
Description
Key features of the NAND512R3A2SZA6E include its small form factor, low power consumption, and high-speed data transfer rates, which enhance device performance. It employs multi-level cell (MLC) technology, allowing multiple bits of data to be stored per memory cell, optimizing storage density. The chip supports standard NAND interface protocols, ensuring compatibility with a wide range of processors and controllers.
Overall, the NAND512R3A2SZA6E represents a versatile and efficient storage solution, combining compact design with reliable performance, and is suitable for manufacturers aiming to integrate high-capacity storage in space-constrained applications.
Equivalent
Features
Pinout
Key functions and features include:
1. Data Storage: It provides non-volatile storage, retaining data without power.
2. NAND Flash Architecture: Uses NAND architecture for high-density storage applications.
3. Interface: Operates on an asynchronous interface.
4. Page Size: Typically has a page size of 2,048 bytes with additional spare bytes for error correction.
5. Erase Block: Organized into blocks (usually 64 pages per block) that can be erased and reprogrammed.
6. Endurance: Supports a limited number of program/erase cycles, typically around 100,000 cycles per block.
This device is suitable for a range of applications including embedded systems, consumer electronics, and industrial applications where reliable mass storage is essential.
Manufacturer
Application
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Computing Devices: Employed in SSDs and other storage solutions for laptops and desktops.
3. Industrial Systems: Utilized in data logging and control systems requiring robust non-volatile memory.
4. Automotive Electronics: Integrated into infotainment systems and navigation units for data storage.
5. Embedded Systems: Supports firmware and application data storage in embedded devices.
These applications benefit from its high-density storage, reliability, and compact form factor.
Package
Frequently Asked Questions
Q: What is the memory density and organization of this NAND Flash?
A: This device offers 512Mbit capacity organized as 64M x 8 bits, suitable for data and code storage in embedded systems.
Q: What is the supply voltage range for the NAND512R3A2SZA6E?
A: The operating voltage is 1.7V to 1.95V, making it ideal for low-power, battery-operated applications.
Q: Does this component support a parallel memory interface?
A: Yes, it uses a parallel interface with a 50ns access time and 50ns write cycle time per word/page.
Q: What is the operating temperature range for this Flash memory?
A: It operates from -40°C to +85°C (TA), supporting industrial-grade environmental conditions.
Q: Is the NAND512R3A2SZA6E still in active production?
A: No, the part status is marked as Obsolete. Please verify availability with distributors before new designs.
Q: What package does this device use?
A: It is housed in a 63-TFBGA (9x11mm) package, suitable for surface mount assembly in compact PCB designs.