NDD04N60ZT4G

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NDD04N60ZT4G

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MOSFET N-CH 600V 4.1A DPAK

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  • 제조업체 부품 #NDD04N60ZT4G

  • 패키지 TO-252-3

  • 재고7046

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 4.1A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2Ohm @ 2A, 10V
Vgs(th)(Max) @ Id 4.5V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 29 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 640 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK

개요

Description

The NDD04N60ZT4G is a power MOSFET, specifically designed for applications requiring high voltage and high-speed switching. Manufactured by ON Semiconductor, this device is part of their Power MOSFET family and is characterized by its robust performance in demanding environments. It features a 600V drain-source breakdown voltage, making it suitable for use in high-voltage applications such as power supplies, inverters, and motor control circuits.
This MOSFET is designed with a low on-resistance, which reduces power loss and enhances efficiency, vital for applications needing high current handling with minimal energy dissipation. The NDD04N60ZT4G features a fast switching speed, which increases the switching frequency and allows for smaller component sizes in power circuits, thus contributing to more compact and efficient electronic designs.
Furthermore, the NDD04N60ZT4G comes in a compact TO-252 package, which is suitable for surface-mount applications, providing flexibility in PCB design and assembly. Its rugged design ensures reliability and long-term performance in industrial and commercial settings.

Equivalent

The NDD04N60ZT4G is a power MOSFET. Equivalent products with similar specifications can include models like:
1. STMicroelectronics STP4N60M2 – 600V, 3.5A N-channel MOSFET.
2. Infineon IPP60R600P6 – 600V, 4.3A N-channel MOSFET.
3. Vishay SIHP6N60E – 600V, 4.9A N-channel MOSFET.
Always verify the datasheets for each to ensure compatibility with your specific application.

Features

The NDD04N60ZT4G is a robust N-channel MOSFET designed by ON Semiconductor. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of approximately 4A. This MOSFET is characterized by its low on-state resistance, enhancing efficiency and reducing power loss during operation. It also offers fast switching capabilities, which makes it suitable for high-speed applications. The NDD04N60ZT4G typically has a low gate charge, ensuring low power consumption in the gate drive.
It is housed in a DPAK (TO-252) package, which allows for efficient heat dissipation and ease of mounting on PCBs. This MOSFET is suitable for various applications, including power supplies, motor drives, and other industrial systems requiring reliable and efficient power management. Additionally, it adheres to industry standards for environmental and thermal performance, making it a dependable choice for electrical engineers looking for a balance of performance and durability.

Pinout

The NDD04N60ZT4G is an N-channel MOSFET produced by ON Semiconductor. This component typically comes in a DPAK (TO-252) package. The DPAK package usually has three primary pins plus a tab, which serves as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. It receives the input signal to switch the MOSFET on or off.
2. Drain (D): This is the pin where the load current enters the MOSFET. It is connected to the drain region of the semiconductor.
3. Source (S): This is the pin where the load current exits the MOSFET. It is connected to the source region of the semiconductor.
4. Tab (also connected to Drain): The metal tab on the package is typically internally connected to the drain and often used for heat dissipation.
The primary function of the NDD04N60ZT4G is to serve as a switch or amplifier in electronic circuits, especially in power management applications.

Manufacturer

The NDD04N60ZT4G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor manufacturer specializing in intelligent power and sensing technologies. The company provides a range of products including power management, sensors, custom devices, and energy-efficient solutions for various applications such as automotive, industrial, cloud, and Internet of Things (IoT). onsemi's focus is on enabling energy-efficient electronics and systems, driving innovation in power and sensing technologies to address global challenges related to energy consumption and sustainability.

Application

The NDD04N60ZT4G is a power MOSFET commonly used in various applications due to its efficient performance in high-voltage environments. Key application areas include:
1. Switching Power Supplies: Used in SMPS for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive systems.
3. Lighting Controls: Employed in LED and other lighting systems.
4. Inverters: Utilized in power inverters for renewable energy systems.
5. Battery Management: Important in battery protection and charging circuits.
6. HVAC Systems: Applied in controlling heating, ventilation, and air conditioning systems.
These applications benefit from the device's fast switching speed and high energy efficiency.

Package

The package type of the NDD04N60ZT4G is a DPAK (TO-252) surface-mount package.

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