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NTD20N03L27T4G
+BOMMOSFET N-CH 30V 20A DPAK
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제조업체UMW 회사
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제조업체 부품 #NTD20N03L27T4G
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데이터시트 NTD20N03L27T4G DataSheet
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재고4787
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사양
| 속성 | 가치 |
| Part Status | Active |
개요
Description
The device is housed in a TO-220 package, facilitating easy heat dissipation, making it suitable for applications such as power management, motor drives, and DC-DC converters. Additionally, its fast switching capabilities enhance performance in high-frequency applications. The NTD20N03L27T4G is often utilized in consumer electronics, automotive systems, and industrial equipment due to its reliability and efficiency.
For design considerations, ensure proper thermal management and adhere to maximum ratings to prevent device failure.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 20A, allowing it to drive substantial loads.
3. On-Resistance: The device features a low R_DS(on) of around 27 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling effective operation with low drive voltages.
5. Package: It is housed in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Applications: Suitable for power management, DC-DC converters, and motor control.
This MOSFET is ideal for applications demanding efficiency and reliability in power switching.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage between the gate and the source allows the device to turn on and conduct current from drain to source.
2. Drain (D) - The drain pin is where the load connects; it is the terminal through which current flows when the device is on.
3. Source (S) - This pin is connected to the ground or the negative side of the load. It completes the circuit for current flow when the MOSFET is conducting.
The NTD20N03L27T4G is designed for applications requiring low on-resistance and high efficiency, making it suitable for power management in various electronic devices.