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NTH4L040N120SC1
+BOMSICFET N-CH 1200V 58A TO247-4
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제조업체온세미
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제조업체 부품 #NTH4L040N120SC1
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 58A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 56mOhm @ 35A, 20V |
| Vgs(th)(Max) @ Id | 4.3V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 106 nC @ 20 V |
| Vgs(Max) | +25V, -15V |
| Input Capacitance(Ciss)(Max) @ Vds | 1762 pF @ 800 V |
| Power Dissipation (Max) | 319W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
개요
Description
The NTH4L040N120SC1 is a silicon carbide (SiC) MOSFET designed for high-efficiency, high-performance applications. Silicon carbide technology offers several advantages over traditional silicon-based components, such as higher thermal conductivity, greater efficiency at high temperatures, and faster switching speeds. These features make SiC MOSFETs ideal for use in power electronics, including applications in renewable energy systems, electric vehicles, industrial power supplies, and aerospace.
The “NTH4L040N120SC1” specifically denotes a product within a series that features a breakdown voltage of 1200V, making it suitable for high-voltage applications. Its design ensures lower conduction and switching losses, contributing to overall improved system efficiency. The MOSFET’s robust construction also leads to increased reliability and a longer lifecycle, which is crucial for demanding environments.
In summary, the NTH4L040N120SC1 is a high-performance SiC MOSFET that provides superior efficiency and reliability for advanced power management systems, leveraging the benefits of silicon carbide technology.
The “NTH4L040N120SC1” specifically denotes a product within a series that features a breakdown voltage of 1200V, making it suitable for high-voltage applications. Its design ensures lower conduction and switching losses, contributing to overall improved system efficiency. The MOSFET’s robust construction also leads to increased reliability and a longer lifecycle, which is crucial for demanding environments.
In summary, the NTH4L040N120SC1 is a high-performance SiC MOSFET that provides superior efficiency and reliability for advanced power management systems, leveraging the benefits of silicon carbide technology.
Equivalent
The NTH4L040N120SC1 is a 1200V, 40A silicon carbide (SiC) MOSFET from ON Semiconductor. Equivalent products from other manufacturers include:
1. CREE/Wolfspeed: C3M0065100K
2. Rohm: SCT3060AR
3. Infineon: IMZA120R030M1H (CoolSiC series)
4. STMicroelectronics: SCT10N120
These alternatives may have slight variations in specifications, so it's crucial to compare datasheets for compatibility with your specific application.
1. CREE/Wolfspeed: C3M0065100K
2. Rohm: SCT3060AR
3. Infineon: IMZA120R030M1H (CoolSiC series)
4. STMicroelectronics: SCT10N120
These alternatives may have slight variations in specifications, so it's crucial to compare datasheets for compatibility with your specific application.
Features
The NTH4L040N120SC1 is a silicon carbide (SiC) MOSFET, designed for high-efficiency power conversion applications. Here are its key features:
1. Voltage and Current Ratings: It typically features a high breakdown voltage of up to 1200V, suitable for high-voltage applications, and can handle significant current levels.
2. Low On-Resistance: This device is characterized by a low on-resistance, which reduces energy loss during operation and improves efficiency.
3. High Switching Speed: The SiC technology allows for fast switching speeds, which minimizes switching losses and is ideal for high-frequency applications.
4. Thermal Performance: It offers excellent thermal management due to the inherent properties of silicon carbide, allowing for operation at higher temperatures compared to silicon-based MOSFETs.
5. Robustness and Reliability: The NTH4L040N120SC1 is known for its durability and reliability under demanding conditions, thanks to its robust construction.
6. Applications: Commonly used in power supplies, motor drives, renewable energy systems, and electric vehicles.
These features make it an attractive choice for designers seeking to improve system efficiency and thermal performance.
1. Voltage and Current Ratings: It typically features a high breakdown voltage of up to 1200V, suitable for high-voltage applications, and can handle significant current levels.
2. Low On-Resistance: This device is characterized by a low on-resistance, which reduces energy loss during operation and improves efficiency.
3. High Switching Speed: The SiC technology allows for fast switching speeds, which minimizes switching losses and is ideal for high-frequency applications.
4. Thermal Performance: It offers excellent thermal management due to the inherent properties of silicon carbide, allowing for operation at higher temperatures compared to silicon-based MOSFETs.
5. Robustness and Reliability: The NTH4L040N120SC1 is known for its durability and reliability under demanding conditions, thanks to its robust construction.
6. Applications: Commonly used in power supplies, motor drives, renewable energy systems, and electric vehicles.
These features make it an attractive choice for designers seeking to improve system efficiency and thermal performance.
Pinout
The NTH4L040N120SC1 is a SiC MOSFET designed by ON Semiconductor. It typically comes in a TO-247 package which has three pins. The pin configuration for this device is as follows:
1. Gate (G): Used to control the MOSFET's switching operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The terminal through which the main current flows from drain to source when the MOSFET is in the 'on' state.
3. Source (S): The terminal paired with the drain to allow current flow through the MOSFET when activated by the gate.
The NTH4L040N120SC1 is designed for high-efficiency power applications, benefiting from the high voltage and temperature capabilities of Silicon Carbide (SiC) technology, which allows for faster switching speeds, reduced losses, and improved thermal performance compared to silicon-based MOSFETs.
1. Gate (G): Used to control the MOSFET's switching operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The terminal through which the main current flows from drain to source when the MOSFET is in the 'on' state.
3. Source (S): The terminal paired with the drain to allow current flow through the MOSFET when activated by the gate.
The NTH4L040N120SC1 is designed for high-efficiency power applications, benefiting from the high voltage and temperature capabilities of Silicon Carbide (SiC) technology, which allows for faster switching speeds, reduced losses, and improved thermal performance compared to silicon-based MOSFETs.
Manufacturer
The NTH4L040N120SC1 is manufactured by onsemi, formerly known as ON Semiconductor. onsemi is a leading semiconductor company that designs and manufactures a broad range of semiconductor solutions. These solutions include intelligent power and sensing technologies, which are used in various applications spanning automotive, industrial, cloud power, and IoT markets. The company focuses on innovative and sustainable solutions that help reduce energy consumption and improve efficiency.
Application
The NTH4L040N120SC1 is a silicon carbide (SiC) MOSFET known for its high efficiency and fast switching capabilities. It is commonly used in applications requiring efficient power conversion and reduced energy losses. Key areas include:
1. Renewable Energy Systems: Enhances the efficiency of solar inverters and wind turbines.
2. Electric Vehicles (EVs): Improves performance in traction inverters and onboard chargers.
3. Industrial Motor Drives: Increases efficiency and reliability.
4. Power Supplies: Used in high-frequency switching power supplies.
5. Telecommunications: Essential for efficient power conversion in base stations.
These applications benefit from its ability to operate at higher temperatures and frequencies compared to traditional silicon MOSFETs.
1. Renewable Energy Systems: Enhances the efficiency of solar inverters and wind turbines.
2. Electric Vehicles (EVs): Improves performance in traction inverters and onboard chargers.
3. Industrial Motor Drives: Increases efficiency and reliability.
4. Power Supplies: Used in high-frequency switching power supplies.
5. Telecommunications: Essential for efficient power conversion in base stations.
These applications benefit from its ability to operate at higher temperatures and frequencies compared to traditional silicon MOSFETs.
Package
The NTH4L040N120SC1 is a MOSFET packaged in a TO-247 package type. This package is typically used for high-power and high-voltage applications, providing good thermal performance and allowing for efficient heat dissipation.
