사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 46A (Ta), 300A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 0.92mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 86 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6100 pF @ 25 V |
| Power Dissipation (Max) | 3.9W (Ta), 166W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
개요
Description
The NTMFS5C410NT1G is a specific part number for an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. This device is designed for use in various electronic applications, particularly where efficient power management is necessary. Here are some key features:
1. N-Channel MOSFET: It uses electrons as the charge carriers, typically preferred for high-speed switching applications.
2. Low On-Resistance: This feature enhances efficiency by reducing power loss during operation, making it suitable for power-sensitive applications.
3. High Current Capacity: It can handle a significant amount of current, which is useful for high-power applications.
4. Compact Design: The device is available in a small package, making it ideal for space-constrained applications.
5. Applications: Commonly used in power supplies, motor controllers, and other applications requiring efficient power handling.
6. Enhanced Performance: Often includes features such as over-temperature protection and low gate charge for better performance.
This MOSFET is a versatile component catering to the needs of modern electronic circuits, focusing on efficiency and reliability.
1. N-Channel MOSFET: It uses electrons as the charge carriers, typically preferred for high-speed switching applications.
2. Low On-Resistance: This feature enhances efficiency by reducing power loss during operation, making it suitable for power-sensitive applications.
3. High Current Capacity: It can handle a significant amount of current, which is useful for high-power applications.
4. Compact Design: The device is available in a small package, making it ideal for space-constrained applications.
5. Applications: Commonly used in power supplies, motor controllers, and other applications requiring efficient power handling.
6. Enhanced Performance: Often includes features such as over-temperature protection and low gate charge for better performance.
This MOSFET is a versatile component catering to the needs of modern electronic circuits, focusing on efficiency and reliability.
Equivalent
The NTMFS5C410NT1G is a power MOSFET. Its equivalent products can include similar MOSFETs from other manufacturers with matching specifications. Some equivalents might be:
1. Vishay SiRA14BDP-T1-GE3
2. Infineon BSC026N08NS5
3. Texas Instruments CSD18563Q5A
4. Alpha & Omega Semiconductor AON7528
Ensure compatibility by checking key specifications like voltage rating, current capacity, and package type before substitution.
1. Vishay SiRA14BDP-T1-GE3
2. Infineon BSC026N08NS5
3. Texas Instruments CSD18563Q5A
4. Alpha & Omega Semiconductor AON7528
Ensure compatibility by checking key specifications like voltage rating, current capacity, and package type before substitution.
Features
The NTMFS5C410NT1G is a power MOSFET manufactured by ON Semiconductor. Key features of this component include:
1. N-Channel MOSFET: It features an N-channel configuration, suitable for switching and amplification tasks.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) around 82A, making it suitable for high-power applications.
3. Low On-Resistance: The MOSFET offers low on-resistance, which minimizes power loss and enhances efficiency.
4. Package Type: It is available in a compact, surface-mounted package, often a PowerPAK SO-8, which is ideal for space-constrained designs.
5. Thermal Performance: The design supports efficient thermal management, crucial for maintaining performance under high loads.
6. Applications: It is commonly used in DC-DC converters, power management, motor control, and other applications requiring efficient power handling.
These features make the NTMFS5C410NT1G a versatile component for designers looking for efficiency and reliability in power management applications.
1. N-Channel MOSFET: It features an N-channel configuration, suitable for switching and amplification tasks.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) around 82A, making it suitable for high-power applications.
3. Low On-Resistance: The MOSFET offers low on-resistance, which minimizes power loss and enhances efficiency.
4. Package Type: It is available in a compact, surface-mounted package, often a PowerPAK SO-8, which is ideal for space-constrained designs.
5. Thermal Performance: The design supports efficient thermal management, crucial for maintaining performance under high loads.
6. Applications: It is commonly used in DC-DC converters, power management, motor control, and other applications requiring efficient power handling.
These features make the NTMFS5C410NT1G a versatile component for designers looking for efficiency and reliability in power management applications.
Pinout
The NTMFS5C410NT1G is a Power MOSFET from ON Semiconductor. It is typically used in applications requiring a compact and efficient power switch. The device is housed in an SO-8FL package, which is an 8-pin package. The primary function of this MOSFET is to serve as a switch or amplifier in power management applications, such as DC-DC converters and load switching.
Key specifications include low on-state resistance (R_DS(on)), which minimizes power loss, and high current-carrying capability. The device is designed to handle high levels of voltage and current efficiently, making it suitable for use in a variety of electronic circuits that require reliable power switching. Its compact size and high efficiency are beneficial for applications where space and power efficiency are critical.
Key specifications include low on-state resistance (R_DS(on)), which minimizes power loss, and high current-carrying capability. The device is designed to handle high levels of voltage and current efficiently, making it suitable for use in a variety of electronic circuits that require reliable power switching. Its compact size and high efficiency are beneficial for applications where space and power efficiency are critical.
Manufacturer
The NTMFS5C410NT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a global semiconductor company that specializes in providing intelligent technology solutions. The company focuses on various sectors, including automotive, industrial, cloud power, and IoT. onsemi's product portfolio includes power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. They are known for their high-performance, energy-efficient solutions that are used in a wide range of applications to improve efficiency and reduce energy consumption.
Application
The NTMFS5C410NT1G is a power MOSFET commonly used in various applications such as DC-DC converters, power management systems, motor drives, and load switches. Its features, including low on-resistance and high-speed switching capabilities, make it suitable for improving efficiency in power conversion and distribution. Additionally, it's often employed in automotive electronics, consumer electronics, and telecom equipment, where efficient power handling is critical. The component's reliability and performance characteristics also make it a good choice for use in industrial applications that require robust power handling.
Package
The NTMFS5C410NT1G is housed in a Power56 package, also known as a 5x6 mm SO-8FL (Small Outline, Flat Lead) package. This package type is designed for surface mounting and enables efficient thermal and electrical performance, making it suitable for power management applications.
