NVMFS5C604NLAFT1G

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NVMFS5C604NLAFT1G

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MOSFET N-CH 60V 287A 5DFN

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 287A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.2mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 52 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 8900 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

개요

Description

The NVMFS5C604NLAFT1G is a PowerTrench MOSFET by ON Semiconductor, designed for high-efficiency power management.
### Key Features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low RDS(on): 5.3mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency applications
- Package: TO-263 (D2PAK), surface-mount
### Applications:
- DC-DC converters
- Motor drives
- Power supplies
- Battery management
This MOSFET offers low conduction losses and high thermal performance, making it suitable for automotive, industrial, and consumer electronics.

Features

The NVMFS5C604NLAFT1G is a 60V, 5.6mΩ N-channel MOSFET by ON Semiconductor, optimized for high-efficiency power applications. Key features:
- Low RDS(on): 5.6mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: 60A continuous drain current (ID).
- Fast Switching: Low gate charge (Qg = 28nC typical) for efficient high-frequency operation.
- Robust Design: Avalanche energy rated, enhancing reliability in harsh conditions.
- Thermal Performance: Low thermal resistance (1.67°C/W) for better heat dissipation.
- Package: DFN5x6 (5mm x 6mm), compact and suitable for space-constrained designs.
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.

Pinout

The NVMFS5C604NLAFT1G is a Power MOSFET with the following key details:
- Pin Count: 8 (DFN-8 package)
- Function: N-channel MOSFET designed for high-efficiency power switching applications.
- Key Parameters:
- VDS: 60V
- ID: 50A (continuous)
- RDS(on): 4.2mΩ (max at VGS=10V)
- Applications: Used in DC-DC converters, motor control, and power management circuits.
This MOSFET is optimized for low on-resistance and high current handling, making it suitable for high-performance power electronics.

Application

The NVMFS5C604NLAFT1G is a power MOSFET designed for high-efficiency power management applications. Key areas include:
- DC-DC Converters: Used in voltage regulation for servers, telecom, and industrial systems.
- Power Supplies: Enhances efficiency in AC-DC and DC-DC power modules.
- Motor Control: Supports brushless DC (BLDC) and servo motor drives.
- Automotive Systems: Applied in 48V mild hybrid systems and battery management.
- Renewable Energy: Optimizes solar inverters and energy storage solutions.
Its low on-resistance and fast switching make it ideal for high-frequency, high-efficiency designs.

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