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SCT1000N170

Name: SCT1000N170
Rating: 4.8 (15 reviews)

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제조업체 부품 #SCT1000N170
데이터시트 SCT1000N170 DataSheet
패키지 TO-247-3
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사양

속성	가치
Package / Case	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain(Id) @ 25°C	7A (Tc)
Drive Voltage(Max Rds On Min Rds On)	20V
Rds On(Max) @ Id Vgs	1.3Ohm @ 3A, 20V
Vgs(th)(Max) @ Id	3.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs	13.3 nC @ 20 V
Vgs(Max)	+22V, -10V
Input Capacitance(Ciss)(Max) @ Vds	133 pF @ 1000 V
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™

개요

Description

The SCT1000N170 is a high-performance SiC MOSFET from ROHM Semiconductor, designed for power electronics applications. Key features:
- Voltage Rating: 1700V
- Current Rating: 1000A (pulsed)
- Low On-Resistance (RDS(on)): Reduces conduction losses
- High-Speed Switching: Minimizes switching losses
- High-Temperature Operation: Suitable for harsh environments
Applications:
- Industrial inverters
- Renewable energy systems (e.g., solar, wind)
- Electric vehicle (EV) charging
- High-voltage power supplies
Advantages:
- Superior efficiency over silicon-based devices
- Compact design due to high power density
For detailed specs, refer to the datasheet or ROHM’s official documentation.

Features

The SCT1000N170 is a high-performance silicon carbide (SiC) MOSFET with the following key features:
- Voltage Rating: 1700V
- Current Rating: 1000A (pulsed)
- Low On-Resistance (R_DS(on)): Typically 6 mΩ
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Up to 175°C
- Low Gate Charge (Q_G): Enhances efficiency
- Robust Body Diode: Supports reverse conduction
- TO-247-4 Package: Improved thermal performance
Designed for high-power applications like EV charging, industrial drives, and renewable energy systems, it offers superior efficiency and thermal management.

Manufacturer

The SCT1000N170 is a silicon carbide (SiC) MOSFET manufactured by ROHM Semiconductor, a Japanese company specializing in semiconductors and electronic components.
ROHM is a well-established firm known for its high-quality power devices, analog ICs, and sensors. It focuses on energy-efficient solutions, particularly in automotive, industrial, and consumer electronics. The SCT1000N170 is part of ROHM’s SiC portfolio, offering high-voltage, low-loss performance for applications like EV chargers and power supplies.

Package

The SCT1000N170 is a silicon carbide (SiC) MOSFET in a TO-247-4L package. This four-lead package includes a Kelvin source pin for improved switching performance, reducing gate-loop inductance. It is designed for high-power applications, offering efficient thermal management and robust performance. The TO-247-4L is widely used in industrial, automotive, and renewable energy systems.