사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 345mOhm @ 1.25A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.1 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 210 pF @ 30 V |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
개요
Description
The SI2309CDS-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Threshold Voltage: -1V (typical)
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Commonly used in power management, load switching, battery protection, and DC-DC converters, it offers fast switching and low power loss. The T1-E3 suffix indicates tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet.
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Threshold Voltage: -1V (typical)
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Commonly used in power management, load switching, battery protection, and DC-DC converters, it offers fast switching and low power loss. The T1-E3 suffix indicates tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI2309CDS-T1-E3 (P-channel MOSFET, 20V, 3.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs before substitution.
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs before substitution.
Features
The SI2309CDS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source, VDS)
- Current Rating: -4.3A (Continuous Drain, ID)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Gate Threshold Voltage: -0.7V (typical)
- Fast Switching: Low gate charge (Qg ~ 6.5nC)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.
- Voltage Rating: -20V (Drain-Source, VDS)
- Current Rating: -4.3A (Continuous Drain, ID)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Gate Threshold Voltage: -0.7V (typical)
- Fast Switching: Low gate charge (Qg ~ 6.5nC)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.
Pinout
The SI2309CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- Voltage Rating: -20V
- Current Rating: -3.7A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Common Applications:
- Power switching
- Load control
- Battery management
Compact and efficient for low-voltage circuits.
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- Voltage Rating: -20V
- Current Rating: -3.7A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Common Applications:
- Power switching
- Load control
- Battery management
Compact and efficient for low-voltage circuits.
Application
The SI2309CDS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Portable Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Portable Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
Package
The SI2309CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 surface-mount package. It is compact, suitable for space-constrained applications, and features three pins for gate, source, and drain connections. The package is industry-standard, offering reliable performance for low-power switching.
