사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 29mOhm @ 5.4A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1295 pF @ 15 V |
| PowerDissipation(Max) | 1.25W (Ta), 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
개요
Description
The SI2369DS-T1-GE3 is a semiconductor component manufactured by Vishay Intertechnology. It is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications that require efficient switching and amplification of electrical signals. The device typically operates as an N-channel MOSFET, which means it uses electrons as charge carriers and is activated by a positive voltage applied to its gate terminal.
Key characteristics often include low on-resistance, fast switching speeds, and moderate voltage and current handling capabilities, making it suitable for applications such as DC-DC converters, load switching, and power management systems. The specifications of this component, like its threshold voltage, drain-source voltage, and continuous drain current, allow it to be used effectively in various electronic circuits.
It is packaged in a compact, surface-mount format, which facilitates easy integration into circuit boards, particularly in space-constrained environments. Overall, the SI2369DS-T1-GE3 is valued for its reliability and efficiency in power and signal management tasks.
Key characteristics often include low on-resistance, fast switching speeds, and moderate voltage and current handling capabilities, making it suitable for applications such as DC-DC converters, load switching, and power management systems. The specifications of this component, like its threshold voltage, drain-source voltage, and continuous drain current, allow it to be used effectively in various electronic circuits.
It is packaged in a compact, surface-mount format, which facilitates easy integration into circuit boards, particularly in space-constrained environments. Overall, the SI2369DS-T1-GE3 is valued for its reliability and efficiency in power and signal management tasks.
Equivalent
The SI2369DS-T1-GE3 is a P-channel MOSFET produced by Vishay. Equivalent products from other manufacturers might include:
1. IRF7404 by Infineon Technologies
2. FDS6679 by ON Semiconductor
3. AO3407 by Alpha & Omega Semiconductor
Ensure compatibility by checking key parameters such as voltage rating, current handling, Rds(on), and package type before substituting. Always refer to the latest datasheets for detailed specifications.
1. IRF7404 by Infineon Technologies
2. FDS6679 by ON Semiconductor
3. AO3407 by Alpha & Omega Semiconductor
Ensure compatibility by checking key parameters such as voltage rating, current handling, Rds(on), and package type before substituting. Always refer to the latest datasheets for detailed specifications.
Features
The SI2369DS-T1-GE3 is a P-channel MOSFET designed for efficient switching and amplification in electronic circuits. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage of -20V and a continuous drain current of approximately -3.1A, making it suitable for low to medium power applications.
2. Low On-Resistance: The MOSFET offers a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency, especially in power management applications.
3. Package Type: It is generally available in a compact SOT-23 package, which aids in saving board space in densely packed circuit designs.
4. Applications: The SI2369DS-T1-GE3 is often employed in DC-DC converters, load switches, and power management systems due to its efficiency and reliability.
5. Thermal Performance: This component is designed to operate within specified thermal limits to ensure stability and performance under various loads and conditions.
6. Gate Charge: The MOSFET features a low gate charge, facilitating faster switching speeds and reduced driving power requirements.
These features make the SI2369DS-T1-GE3 a versatile component in modern electronic applications.
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage of -20V and a continuous drain current of approximately -3.1A, making it suitable for low to medium power applications.
2. Low On-Resistance: The MOSFET offers a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency, especially in power management applications.
3. Package Type: It is generally available in a compact SOT-23 package, which aids in saving board space in densely packed circuit designs.
4. Applications: The SI2369DS-T1-GE3 is often employed in DC-DC converters, load switches, and power management systems due to its efficiency and reliability.
5. Thermal Performance: This component is designed to operate within specified thermal limits to ensure stability and performance under various loads and conditions.
6. Gate Charge: The MOSFET features a low gate charge, facilitating faster switching speeds and reduced driving power requirements.
These features make the SI2369DS-T1-GE3 a versatile component in modern electronic applications.
Pinout
The SI2369DS-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is a part of the TrenchFET series and is used in various power management applications. This component comes in a small SOT-23 package, which features 3 pins.
The pin configuration is as follows:
1. Pin 1 (Gate): This is the control terminal of the MOSFET, used to switch the device on or off.
2. Pin 2 (Source): This pin is the source terminal of the MOSFET and serves as the return path for the current.
3. Pin 3 (Drain): This is the output terminal where the load is connected, and it conducts current when the MOSFET is turned on.
The SI2369DS-T1-GE3 is commonly used for load switching applications due to its low on-resistance and fast switching capability. It offers efficient power handling and is suitable for use in portable devices and other battery-powered applications.
The pin configuration is as follows:
1. Pin 1 (Gate): This is the control terminal of the MOSFET, used to switch the device on or off.
2. Pin 2 (Source): This pin is the source terminal of the MOSFET and serves as the return path for the current.
3. Pin 3 (Drain): This is the output terminal where the load is connected, and it conducts current when the MOSFET is turned on.
The SI2369DS-T1-GE3 is commonly used for load switching applications due to its low on-resistance and fast switching capability. It offers efficient power handling and is suitable for use in portable devices and other battery-powered applications.
Manufacturer
The SI2369DS-T1-GE3 is manufactured by Vishay Intertechnology. Vishay is a global company specializing in the design and production of discrete semiconductors and passive electronic components. Established in 1962, the company has grown to become one of the largest manufacturers in its field, supplying components essential for a wide range of electronic devices and systems. Vishay's products are used in various industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical.
Application
The SI2369DS-T1-GE3 is a MOSFET transistor commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Used in power management systems for efficient switching.
2. Load Switches: Applied in battery-powered devices to control power distribution.
3. DC-DC Converters: Ideal for voltage regulation in power supplies.
4. Motor Drives: Utilized in controlling brushless motors in consumer electronics.
5. Portable Devices: Implemented in smartphones and tablets for power efficiency.
6. LED Drivers: Used in controlling LED lighting systems for brightness adjustments.
These applications leverage its properties for efficient power handling and switching speed.
1. Switching Circuits: Used in power management systems for efficient switching.
2. Load Switches: Applied in battery-powered devices to control power distribution.
3. DC-DC Converters: Ideal for voltage regulation in power supplies.
4. Motor Drives: Utilized in controlling brushless motors in consumer electronics.
5. Portable Devices: Implemented in smartphones and tablets for power efficiency.
6. LED Drivers: Used in controlling LED lighting systems for brightness adjustments.
These applications leverage its properties for efficient power handling and switching speed.
Package
The SI2369DS-T1-GE3 is a MOSFET transistor that typically comes in a surface-mounted package known as the SOT-23. This package type is compact, making it suitable for small, densely packed electronic circuit boards.
