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SI7157DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8

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제조업체 부품 #SI7157DP-T1-GE3
데이터시트 SI7157DP-T1-GE3 DataSheet
패키지 PowerPAK-SO-8
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사양

속성	가치
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	2.5V, 10V
RdsOn(Max)@IdVgs	1.6mOhm @ 25A, 10V
Vgs(th)(Max)@Id	1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs	625 nC @ 10 V
Vgs(Max)	±12V
InputCapacitance(Ciss)(Max)@Vds	22000 pF @ 10 V
PowerDissipation(Max)	6.25W (Ta), 104W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® SO-8

개요

Description

The SI7157DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The SI7157DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).

Package

The SI7157DP-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low thermal resistance and efficient heat dissipation, making it suitable for power management in space-constrained designs. The package dimensions are typically 4.9mm x 3.9mm x 1.75mm.