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SI7469DP-T1-E3

Name: SI7469DP-T1-E3
Rating: 4.8 (15 reviews)

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MOSFET P-CH 80V 28A PPAK SO-8

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제조업체 부품 #SI7469DP-T1-E3
데이터시트 SI7469DP-T1-E3 DataSheet
패키지 PowerPAK-SO-8
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사양

속성	가치
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V
Current-ContinuousDrain(Id)@25°C	28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	25mOhm @ 10.2A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	160 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	4700 pF @ 40 V
PowerDissipation(Max)	5.2W (Ta), 83.3W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® SO-8

개요

Features

The SI7469DP-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, V_DSS)
- Current Rating: -11.5A (Continuous Drain Current, I_D)
- Low On-Resistance: 28mΩ (max) at V_GS = -10V
- Gate Threshold Voltage: -1V to -2.5V (V_GS(th))
- Fast Switching: Low gate charge (Q_g) for efficient performance
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC conversion
This MOSFET is optimized for high efficiency and thermal performance in space-constrained designs.

Pinout

The SI7469DP-T1-E3 is a P-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though typically only 4 are functional; others are for thermal enhancement).
- Function: Designed for power switching applications, it features:
- Low on-resistance (RDS(on)): Enhances efficiency.
- High current handling (up to -23A continuous).
- Voltage rating: -30V (drain-to-source, VDS).
- Logic-level gate drive (compatible with -4.5V to -20V VGS).
Common uses include load switching, DC-DC conversion, and battery management. The extra pins improve heat dissipation.

Package

The SI7469DP-T1-E3 is a PowerPAK SO-8 package, designed for surface-mount applications. It features a compact, thermally efficient design suitable for power MOSFETs, enhancing performance in high-current and high-voltage applications. The package ensures low on-resistance and improved heat dissipation.