SI7625DN-T1-GE3

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SI7625DN-T1-GE3

+BOM

MOSFET P-CH 30V 35A PPAK1212-8

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 35A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 7mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 126 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4427 pF @ 15 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8

개요

Description

The SI7625DN-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (pulsed)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
### Applications:
- Synchronous rectification in buck/boost converters
- Battery management and power distribution
- Industrial & automotive systems
### Advantages:
- Low conduction losses due to ultra-low RDS(on)
- High current handling in a small footprint
- AEC-Q101 qualified for automotive use
Ideal for space-constrained, high-performance designs requiring efficient power switching.

Equivalent

Equivalent products to the SI7625DN-T1-GE3 (30V P-Channel MOSFET) include:
- AO3401 (AOS)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
- FDC5612P (Fairchild/ON Semi)
These alternatives offer similar specifications (30V, -4.3A to -5A, low RDS(on)). Verify pinout and parameters for compatibility.

Pinout

The SI7625DN-T1-GE3 is a 60V N-channel MOSFET in a PowerPAK® SO-8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Source): Connected internally for low resistance.
- Pin 4 (Gate): Controls switching.
- Pins 5, 6, 7, 8 (Drain): High-current path, internally linked for efficiency.
Applications: Power switching in DC-DC converters, motor control, and load management.
Features:
- Low RDS(on) for reduced conduction losses.
- Fast switching for high efficiency.

Application

The SI7625DN-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Motor Control – Driving small motors in automotive and industrial systems.
4. Load Switching – Efficient power distribution in consumer electronics.
5. Automotive Applications – Used in infotainment, lighting, and power systems.
Its low on-resistance (RDS(on)) and high efficiency make it ideal for compact, energy-sensitive designs.

Package

The SI7625DN-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low on-resistance and efficient thermal performance, making it suitable for power management in devices like DC-DC converters and motor controls. The package is lead-free and RoHS compliant.

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