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SIA436DJ-T1-GE3
+BOMMOSFET N-CH 8V 12A PPAK SC70-6
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제조업체실리콘 닉스
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제조업체 부품 #SIA436DJ-T1-GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SIA436 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 15.7A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 5 V |
| Vgs (Max) | ±5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1508 pF @ 4 V |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Package / Case | PowerPAK® SC-70-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
The SIA436DJ-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like load switching, battery protection, and DC-DC conversion.
### Key Features:
- Voltage Rating: -30V (drain-to-source).
- Current Rating: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 36mΩ (max) at -10V gate drive.
- Fast Switching: Optimized for high-speed applications.
- Compact Package: PowerPAK® SO-8 for space-constrained designs.
- AEC-Q101 Qualified: Suitable for automotive applications.
### Applications:
- Power distribution in automotive systems.
- Battery management in portable devices.
- Load switches in industrial and consumer electronics.
This MOSFET offers low power loss, high reliability, and thermal efficiency, making it ideal for demanding environments.
### Key Features:
- Voltage Rating: -30V (drain-to-source).
- Current Rating: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 36mΩ (max) at -10V gate drive.
- Fast Switching: Optimized for high-speed applications.
- Compact Package: PowerPAK® SO-8 for space-constrained designs.
- AEC-Q101 Qualified: Suitable for automotive applications.
### Applications:
- Power distribution in automotive systems.
- Battery management in portable devices.
- Load switches in industrial and consumer electronics.
This MOSFET offers low power loss, high reliability, and thermal efficiency, making it ideal for demanding environments.
Equivalent
Equivalent products to the SIA436DJ-T1-GE3 (a 30V P-channel MOSFET) include:
- SI2301DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- AO3401A (Alpha & Omega)
- IRLML6402TRPBF (Infineon)
These alternatives offer similar specifications (30V, P-channel, SOT-23 package). Always verify datasheets for exact compatibility.
- SI2301DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- AO3401A (Alpha & Omega)
- IRLML6402TRPBF (Infineon)
These alternatives offer similar specifications (30V, P-channel, SOT-23 package). Always verify datasheets for exact compatibility.
Features
The SIA436DJ-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -9.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 36mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- AEC-Q101 Qualified: Suitable for automotive applications
- Low Gate Charge (Qg): Enhances switching performance
Ideal for load switching, power management, and DC-DC conversion in automotive, industrial, and consumer electronics.
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -9.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 36mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- AEC-Q101 Qualified: Suitable for automotive applications
- Low Gate Charge (Qg): Enhances switching performance
Ideal for load switching, power management, and DC-DC conversion in automotive, industrial, and consumer electronics.
Pinout
The SIA436DJ-T1-GE3 is a 4-pin P-channel MOSFET in a PowerPAK® SO-8 package.
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Source (S) – Connected to the input voltage (two pins internally tied).
3. Drain (D) – Output connection (two pins internally tied).
4. Exposed Pad – Thermal pad for heat dissipation (must be grounded).
Key Features:
- -30V drain-source voltage (VDS).
- -12A continuous drain current (ID).
- Low on-resistance (RDS(on) = 9.5mΩ max).
- Designed for power management in applications like load switches and DC-DC converters.
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Source (S) – Connected to the input voltage (two pins internally tied).
3. Drain (D) – Output connection (two pins internally tied).
4. Exposed Pad – Thermal pad for heat dissipation (must be grounded).
Key Features:
- -30V drain-source voltage (VDS).
- -12A continuous drain current (ID).
- Low on-resistance (RDS(on) = 9.5mΩ max).
- Designed for power management in applications like load switches and DC-DC converters.
Manufacturer
The SIA436DJ-T1-GE3 is a MOSFET manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay (founded in 1962) specializes in producing high-performance discrete semiconductors, including diodes, transistors, and power MOSFETs. The company serves industries like automotive, industrial, computing, and telecommunications, known for reliability and innovation in power management solutions.
The SIA436DJ-T1-GE3 is part of Vishay’s TrenchFET® Gen IV series, optimized for efficiency in power conversion applications.
Vishay (founded in 1962) specializes in producing high-performance discrete semiconductors, including diodes, transistors, and power MOSFETs. The company serves industries like automotive, industrial, computing, and telecommunications, known for reliability and innovation in power management solutions.
The SIA436DJ-T1-GE3 is part of Vishay’s TrenchFET® Gen IV series, optimized for efficiency in power conversion applications.
Application
The SIA436DJ-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in portable devices.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Consumer Electronics – Smartphones, tablets, and wearables.
Its low on-resistance (RDS(on)) and compact package (PowerPAK® SC-70) make it ideal for space-constrained, high-efficiency applications.
1. Power Management – Voltage regulation, load switching.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in portable devices.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Consumer Electronics – Smartphones, tablets, and wearables.
Its low on-resistance (RDS(on)) and compact package (PowerPAK® SC-70) make it ideal for space-constrained, high-efficiency applications.
Package
The SIA436DJ-T1-GE3 is a PowerPAK® SO-8 package, designed by Vishay for high-efficiency power applications. This compact surface-mount package offers excellent thermal performance and is commonly used in DC-DC converters and power management circuits. Its small footprint (similar to SO-8) makes it suitable for space-constrained designs.
