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SQ2361ES-T1_GE3
+BOMMOSFET P-CH 60V 2.8A SSOT23
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제조업체실리콘 닉스
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제조업체 부품 #SQ2361ES-T1_GE3
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재고3874
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SQ2361 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 177mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 30 V |
| Power Dissipation (Max) | 2W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
1. Course Overview: Briefly describe the main focus of SQ2361ES-T1_GE3, highlighting core topics and objectives.
2. Learning Outcomes: Outline what students are expected to learn by the end of the course. This could include specific skills, knowledge areas, or competencies.
3. Key Components: Mention any significant elements of the course, such as lectures, labs, projects, or exams.
4. Relevance: Explain the importance of the course within the broader curriculum or field of study. Discuss its applications or how it prepares students for future coursework or careers.
5. Prerequisites: List any required prior knowledge or courses needed to enroll in SQ2361ES-T1_GE3.
6. Instructor Information: Provide details about the instructor, including their background and expertise.
For further details, refer to the course syllabus or contact the educational institution offering the course.
Equivalent
Features
1. Type: It is likely a surface-mount device (SMD) suitable for automated assembly.
2. Package: May come in a TO-263 package, commonly used for transistors.
3. Application: Suitable for switching and amplification in electronic circuits.
4. Electrical Characteristics: Could include parameters like collector current, voltage ratings, and power dissipation.
5. Thermal Management: Designed with efficient heat dissipation capabilities.
For precise features, checking the datasheet or the manufacturer's specifications is recommended, as model numbers can be reused across different product types.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the pin where the load current enters the MOSFET. It connects to the device being powered or controlled.
3. Source (S): The source is the pin through which current exits the MOSFET, typically connected to ground in N-channel devices.
The SQ2361ES-T1_GE3 is used for switching and amplifying electronic signals in a variety of applications, including power management and voltage regulation. Its small package size is suited for portable or compact devices.