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SIR164DP-T1-GE3
+BOMMOSFET N-CH 30V 50A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SIR164DP-T1-GE3
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패키지 PowerPAK-SO-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 123 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3950 pF @ 15 V |
| Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
The SIR164DP-T1-GE3 is a Schottky Barrier Rectifier diode commonly used in power management and electronic circuit applications. Manufactured by Vishay Semiconductors, this diode is designed for high-efficiency performance, offering low forward voltage drop and fast switching speed. It is suitable for surface-mount technology (SMT), making it ideal for compact and high-density circuit designs.
Key specifications include a reverse voltage rating typically around 60V and a forward current rating of approximately 1A, although exact values can vary based on specific model versions. The SIR164DP-T1-GE3 is often employed in applications such as power supplies, converters, and freewheeling diodes in various electronic devices. Its reliable performance and efficiency help reduce power loss, making it a favored choice in energy-sensitive environments.
Overall, the SIR164DP-T1-GE3 is valued for its efficiency, reliability, and compact form factor, catering to a wide range of industrial and consumer electronic applications.
Key specifications include a reverse voltage rating typically around 60V and a forward current rating of approximately 1A, although exact values can vary based on specific model versions. The SIR164DP-T1-GE3 is often employed in applications such as power supplies, converters, and freewheeling diodes in various electronic devices. Its reliable performance and efficiency help reduce power loss, making it a favored choice in energy-sensitive environments.
Overall, the SIR164DP-T1-GE3 is valued for its efficiency, reliability, and compact form factor, catering to a wide range of industrial and consumer electronic applications.
Equivalent
The SIR164DP-T1-GE3 is a MOSFET used for power management applications. Equivalent products could include MOSFETs with similar specifications, such as:
1. Infineon BSC026N08NS5ATMA1
2. STMicroelectronics STL90N4LLF5
3. ON Semiconductor NTMFS5C404NL
When selecting an equivalent, ensure that the voltage, current ratings, Rds(on), and package type match the SIR164DP-T1-GE3 specifications. Always verify with the latest datasheets from manufacturers to ensure compatibility.
1. Infineon BSC026N08NS5ATMA1
2. STMicroelectronics STL90N4LLF5
3. ON Semiconductor NTMFS5C404NL
When selecting an equivalent, ensure that the voltage, current ratings, Rds(on), and package type match the SIR164DP-T1-GE3 specifications. Always verify with the latest datasheets from manufacturers to ensure compatibility.
Features
The SIR164DP-T1-GE3 is a type of N-channel MOSFET transistor designed for efficient power management and switching applications. Key features include:
1. Low On-Resistance: Provides minimal power loss and higher efficiency in power applications.
2. High-Speed Switching: Ensures quick response in circuits, suitable for high-frequency applications.
3. Compact Package: Offered in a small, surface-mount package, ideal for space-constrained designs.
4. Robust Performance: Capable of handling high current and voltage, enhancing durability in demanding applications.
5. Thermal Efficiency: Designed to dissipate heat effectively, reducing the risk of overheating.
6. Enhanced Reliability: Built to withstand harsh operating conditions, improving device longevity.
7. RoHS Compliant: Environmentally friendly, following restrictions on hazardous substances.
These features make the SIR164DP-T1-GE3 suitable for various applications, including automotive, consumer electronics, and industrial systems, where reliable and efficient power management is crucial.
1. Low On-Resistance: Provides minimal power loss and higher efficiency in power applications.
2. High-Speed Switching: Ensures quick response in circuits, suitable for high-frequency applications.
3. Compact Package: Offered in a small, surface-mount package, ideal for space-constrained designs.
4. Robust Performance: Capable of handling high current and voltage, enhancing durability in demanding applications.
5. Thermal Efficiency: Designed to dissipate heat effectively, reducing the risk of overheating.
6. Enhanced Reliability: Built to withstand harsh operating conditions, improving device longevity.
7. RoHS Compliant: Environmentally friendly, following restrictions on hazardous substances.
These features make the SIR164DP-T1-GE3 suitable for various applications, including automotive, consumer electronics, and industrial systems, where reliable and efficient power management is crucial.
Pinout
The SIR164DP-T1-GE3 is a power MOSFET produced by Vishay Siliconix. It typically comes in a PowerPAK SO-8 package, which has a standard pin count of 8. However, the actual pin configuration may vary slightly depending on the specific model or application.
For the SIR164DP-T1-GE3, the pins are generally configured as follows:
1. Drain (D): Multiple pins are internally connected to the drain for improved current handling and heat dissipation. Typically, this would involve 4 pins (often pins 5, 6, 7, and 8).
2. Source (S): This is the output pin of the MOSFET. Typically, pins 1, 2, and 3 are connected to the source.
3. Gate (G): The gate pin controls the MOSFET's switching. Usually, pin 4 is used as the gate.
The SIR164DP-T1-GE3 is used in applications requiring efficient power management, such as synchronous rectification, DC-DC converters, and load switching. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.
For the SIR164DP-T1-GE3, the pins are generally configured as follows:
1. Drain (D): Multiple pins are internally connected to the drain for improved current handling and heat dissipation. Typically, this would involve 4 pins (often pins 5, 6, 7, and 8).
2. Source (S): This is the output pin of the MOSFET. Typically, pins 1, 2, and 3 are connected to the source.
3. Gate (G): The gate pin controls the MOSFET's switching. Usually, pin 4 is used as the gate.
The SIR164DP-T1-GE3 is used in applications requiring efficient power management, such as synchronous rectification, DC-DC converters, and load switching. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.
Manufacturer
The SIR164DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay's components are used in various applications across numerous industries, such as automotive, industrial, computing, telecommunications, consumer electronics, and aerospace.
Vishay Intertechnology was founded in 1962 and has grown to become one of the largest manufacturers in its field. The company is known for its innovation in the electronics sector and for providing high-quality, reliable components for different electronic applications. Vishay's global presence and extensive product portfolio make it a significant player in the electronic components industry.
Vishay Intertechnology was founded in 1962 and has grown to become one of the largest manufacturers in its field. The company is known for its innovation in the electronics sector and for providing high-quality, reliable components for different electronic applications. Vishay's global presence and extensive product portfolio make it a significant player in the electronic components industry.
Application
The SIR164DP-T1-GE3 is a Schottky diode, useful in various applications such as power management, voltage clamping, and rectification in power supply circuits. It is commonly used in DC-DC converters, battery-operated devices, and switch-mode power supplies due to its low forward voltage drop and fast switching capabilities. Additionally, it can be employed in reverse battery protection, freewheeling diodes in motor applications, and in RF and microwave applications for signal detection and mixing. Its compact size makes it suitable for use in consumer electronics where space efficiency is critical.
Package
The SIR164DP-T1-GE3 is housed in a PowerPAK SO-8 package. This type of packaging is commonly used for power MOSFETs, providing enhanced thermal performance and a compact footprint suitable for high-density mounting on PCBs.
