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SIR416DP-T1-GE3

Name: SIR416DP-T1-GE3
Rating: 4.8 (15 reviews)

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MOSFET N-CH 40V 50A PPAK SO-8

제조업체실리콘 닉스
제조업체 부품 #SIR416DP-T1-GE3
데이터시트 SIR416DP-T1-GE3 DataSheet
패키지 PowerPAK-SO-8
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain(Id) @ 25°C	50A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	3.8mOhm @ 15A, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	90 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	3350 pF @ 20 V
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8

개요

Description

The SIR416DP-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in compact applications. Key features include:
- Low On-Resistance (RDS(on)): Minimizes power loss.
- Small DFN Package (3mm x 3mm): Saves board space.
- High Current Handling (up to -4.5A): Suitable for power switching.
- Logic-Level Gate Drive: Compatible with 3.3V/5V controllers.
Ideal for load switching, battery protection, and DC-DC conversion in portable devices, servers, and automotive systems. The -GE3 suffix indicates halogen-free, RoHS-compliant packaging.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SIR416DP-T1-GE3 (Vishay's dual P-channel MOSFET) include:
- SiRA12DP-T1-GE3 (Similar specs, lower current rating)
- SiRA14DP-T1-GE3 (Higher current handling)
- SiRA18DP-T1-GE3 (Higher voltage rating)
- FDS6679AZ (Fairchild alternative)
- DMG1012UW (Diodes Inc. alternative)
Check datasheets for exact compatibility in your application.

Pinout

The SIR416DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function: Designed for high-efficiency power switching in applications like DC-DC converters, load switches, and motor control.
- Key Features:
- Low on-resistance (RDS(on)) for reduced power loss.
- Dual N-channel configuration (two independent MOSFETs in one package).
- Optimized for synchronous buck converters.
Pins typically include dual source, gate, and drain connections (refer to the datasheet for exact pinout).

Application

The SIR416DP-T1-GE3 is a dual P-channel MOSFET used in:
1. Power Management – Voltage regulation and load switching in DC-DC converters.
2. Battery Protection – Safeguarding circuits in portable devices.
3. Automotive Systems – Power distribution and control modules.
4. Consumer Electronics – Efficient power handling in smartphones, tablets, etc.
5. Industrial Applications – Motor drives and power supplies.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.