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SIR422DP-T1-GE3

Name: SIR422DP-T1-GE3
Rating: 4.8 (15 reviews)

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MOSFET N-CH 40V 40A PPAK SO-8

제조업체실리콘 닉스
제조업체 부품 #SIR422DP-T1-GE3
데이터시트 SIR422DP-T1-GE3 DataSheet
패키지 PowerPAK-SO-8
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain(Id) @ 25°C	40A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	6.6mOhm @ 20A, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	48 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	1785 pF @ 20 V
Power Dissipation (Max)	5W (Ta), 34.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8

개요

Description

The SIR422DP-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, motor control, and load switching.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max) at 10V
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, surface-mount)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Synchronous rectification in power supplies
- Battery management systems
- Industrial & automotive power systems
This MOSFET offers high current handling, low conduction losses, and thermal efficiency, making it ideal for space-constrained, high-performance designs.

Equivalent

Equivalent products to the SIR422DP-T1-GE3 (Vishay) include:
- STP80NF55-06 (STMicroelectronics)
- IRF3205 (Infineon)
- FDP8870 (ON Semiconductor)
These are N-channel MOSFETs with similar voltage (55V-60V), current (80A-100A), and power handling specs. Check datasheets for exact compatibility in your application.

Application

The SIR422DP-T1-GE3 is a dual N-channel MOSFET used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – Engine control, LED lighting, infotainment.
3. Industrial Applications – Motor drives, power supplies.
4. Consumer Electronics – Fast-switching circuits in devices.
5. Telecom/Networking – Power distribution in servers/routers.
Its low on-resistance (RDS(on)) and high efficiency make it ideal for high-performance, energy-efficient designs.

Package

The SIR422DP-T1-GE3 is a dual P-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The package type ensures high power density and reliability in a small footprint.