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SIR873DP-T1-GE3
+BOMMOSFET P-CH 150V 37A PPAK SO-8
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제조업체실리콘 닉스
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제조업체 부품 #SIR873DP-T1-GE3
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패키지 PowerPAK-SO-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 37A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 47.5mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 48 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1805 pF @ 75 V |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
개요
Description
- Frequency Range: Optimized for UHF to 2.5 GHz (e.g., ISM, broadcast, aerospace).
- High Power: Delivers 75W output power (at 28V, 1dB compression).
- Efficiency: High gain (14dB typical) and efficiency for Class AB amplifiers.
- Package: DP (D2PAK) for robust thermal management.
- Voltage Rating: 28V operation, suitable for demanding RF circuits.
Ideal for RF power amplifiers, transmitters, and industrial systems, it combines reliability with high-power performance.
Equivalent
- C3M0065090D (Wolfspeed)
- SCT3040KL (ROHM)
- IDW30G120C5 (Infineon)
These are 900V+ SiC MOSFETs with similar performance in power applications. Check datasheets for exact specs.
Features
- Low On-Resistance: 4.5mΩ (max) at 10V, reducing conduction losses.
- High Current Handling: Supports up to 8.7A continuous drain current.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters).
- Low Gate Charge (Qg): Enhances switching efficiency.
- 30V Drain-Source Voltage (VDS): Suitable for low-voltage power management.
- Thermal Performance: PowerPAK® package improves heat dissipation.
- AEC-Q101 Qualified: Reliable for automotive applications.
- Lead-Free & RoHS Compliant: Environmentally friendly.
Ideal for synchronous rectification, load switching, and motor control in automotive, industrial, and consumer electronics.
Pinout
- Pin Count: 8 pins (standard SO-8 footprint).
- Function: Designed for high-efficiency power switching in applications like DC-DC converters, load switches, and motor control.
- Key Features:
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Optimized for synchronous rectification in buck converters.
- Logic-level gate drive compatibility.
This MOSFET is commonly used in automotive, industrial, and computing power systems.
Manufacturer
Vishay is a publicly traded company (NYSE: VSH) known for producing high-performance diodes, MOSFETs, resistors, and capacitors. Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SIR873DP-T1-GE3 is a power MOSFET designed for efficient switching applications, reflecting Vishay's expertise in semiconductor solutions.
Application
- DC-DC Converters – Used in voltage regulation for servers, telecom, and industrial systems.
- Motor Control – Efficient switching in automotive, robotics, and industrial drives.
- Power Supplies – Enhances performance in AC-DC and DC-DC power modules.
- Battery Management – Supports fast switching in portable devices and EVs.
- LED Lighting – Enables high-efficiency drivers for solid-state lighting.
Its low on-resistance and fast switching make it ideal for high-frequency, high-efficiency power systems.