SIRA18BDP-T1-GE3

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SIRA18BDP-T1-GE3

+BOM

MOSFET N-CH 30V 19A/40A PPAK SO8

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사양

속성 가치
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 6.83mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 19 nC @ 10 V
Vgs(Max) +20V, -16V
Input Capacitance(Ciss)(Max) @ Vds 680 pF @ 15 V
Power Dissipation (Max) 3.8W (Ta), 17W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

개요

Description

Pinout

Pin count: 18 pins. Function: Requires the datasheet to confirm exact pinout and role of each pin; please provide the manufacturer or a link to the datasheet.

Application

I don’t have the exact datasheet for SIRA18BDP-T1-GE3. If it’s a sensor/IC in the SIRA family, typical application areas include:
- Robotics and motion control (position sensing, motor feedback)
- Industrial automation and process control
- Automotive sensing and body electronics
- Consumer electronics and IoT
- Medical devices and laboratory instrumentation
- Telecommunications/RF front-ends
For precise applications, please share the datasheet or confirm the device category.

Package

Package type: SIRA (SiR) package — a small two-pin SMT LED/diode package from Osram.

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