사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 95mOhm @ 4.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 550 pF @ 30 V |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
개요
Description
The SQ2362ES-T1_GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switching, and motor control.
Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (pulsed) / 30A (continuous)
- Low On-Resistance (RDS(on)): 2.6mΩ (max) at 10V VGS
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
Applications:
- Power supplies
- Battery management
- Automotive systems
This MOSFET offers low conduction losses, high current handling, and robust thermal performance, making it suitable for space-constrained, high-power designs.
Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (pulsed) / 30A (continuous)
- Low On-Resistance (RDS(on)): 2.6mΩ (max) at 10V VGS
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
Applications:
- Power supplies
- Battery management
- Automotive systems
This MOSFET offers low conduction losses, high current handling, and robust thermal performance, making it suitable for space-constrained, high-power designs.
Features
The SQ2362ES-T1_GE3 is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.6mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Gate Drive Voltage (VGS): ±20V (max), 4.5V (typical threshold)
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is designed for high-current, low-loss performance in space-constrained designs.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.6mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Gate Drive Voltage (VGS): ±20V (max), 4.5V (typical threshold)
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is designed for high-current, low-loss performance in space-constrained designs.
Pinout
The SQ2362ES-T1_GE3 is a dual N-channel MOSFET in a SOT-23-6 package, featuring 6 pins.
Pin Functions:
1. Pin 1 (Gate 1) – Controls the first MOSFET.
2. Pin 2 (Source 1) – Source terminal for the first MOSFET.
3. Pin 3 (Drain 1) – Drain terminal for the first MOSFET.
4. Pin 4 (Drain 2) – Drain terminal for the second MOSFET.
5. Pin 5 (Source 2) – Source terminal for the second MOSFET.
6. Pin 6 (Gate 2) – Controls the second MOSFET.
This device is commonly used for power switching in compact applications.
Pin Functions:
1. Pin 1 (Gate 1) – Controls the first MOSFET.
2. Pin 2 (Source 1) – Source terminal for the first MOSFET.
3. Pin 3 (Drain 1) – Drain terminal for the first MOSFET.
4. Pin 4 (Drain 2) – Drain terminal for the second MOSFET.
5. Pin 5 (Source 2) – Source terminal for the second MOSFET.
6. Pin 6 (Gate 2) – Controls the second MOSFET.
This device is commonly used for power switching in compact applications.
Application
The SQ2362ES-T1_GE3 is a N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, robotics.
4. LED Lighting – Driver circuits for efficient control.
5. Consumer Electronics – Smartphones, tablets, and portable devices.
Its low on-resistance (RDS(on)) and compact package (SOT-23-3) make it ideal for space-constrained, high-efficiency applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, robotics.
4. LED Lighting – Driver circuits for efficient control.
5. Consumer Electronics – Smartphones, tablets, and portable devices.
Its low on-resistance (RDS(on)) and compact package (SOT-23-3) make it ideal for space-constrained, high-efficiency applications.
Package
The SQ2362ES-T1_GE3 is a SOT-23-3 (TO-236AB) surface-mount package. It is a small, 3-pin plastic package commonly used for transistors and diodes, with dimensions of approximately 2.9mm x 1.3mm x 1.1mm. Suitable for compact PCB designs.
