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STB18NM80

Name: STB18NM80
Rating: 4.8 (15 reviews)

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MOSFET N-CH 800V 17A D2PAK

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제조업체 부품 #STB18NM80
데이터시트 STB18NM80 DataSheet
패키지 TO-263-3
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	MDmesh™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain(Id) @ 25°C	17A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V
Rds On(Max) @ Id Vgs	295mOhm @ 8.5A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	70 nC @ 10 V
Vgs(Max)	±25V
Input Capacitance(Ciss)(Max) @ Vds	2070 pF @ 50 V
Power Dissipation (Max)	190W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)

개요

Description

The STB18NM80 is an N-channel power MOSFET from STMicroelectronics, designed for high-voltage, high-efficiency applications. Key features include:
- Voltage Rating: 800V, suitable for industrial and automotive systems.
- Current Handling: Up to 18A (continuous) with low on-resistance (RDS(on) ~0.28Ω), reducing conduction losses.
- Fast Switching: Optimized for applications like SMPS, motor drives, and inverters.
- Robustness: Avalanche-rated and housed in a TO-263 (D²PAK) package for thermal efficiency.
Ideal for power conversion and switching circuits requiring reliability and performance.

Equivalent

Equivalent products to the STB18NM80 (800V, 18A N-channel MOSFET) include:
- IRFP460 (500V, 20A)
- STP18NM80N (800V, 18A, same series)
- FDP18N50 (500V, 18A)
- IXFH18N80 (800V, 18A)
Check voltage/current ratings and package compatibility before substitution. For exact matches, refer to datasheets.

Features

The STB18NM80 is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V drain-source voltage (V_DSS).
- Current Rating: 18A continuous drain current (I_D).
- Low On-Resistance: 280mΩ (max) at 10V gate drive (R_DS(on)).
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Package: TO-263 (D²PAK), suitable for power applications.
- Gate Charge (Q_g): Low (~60nC typical), improving efficiency.
Ideal for switching power supplies, motor control, and inverters due to its high voltage and current handling with low conduction losses.

Pinout

The STB18NM80 is an N-channel MOSFET with 3 pins (TO-263/D²PAK package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current input (connected to load).
3. Source (S) – Main current output (connected to ground).
Key Features:
- 800V drain-source voltage (V_DS).
- 18A continuous drain current (I_D).
- Low on-resistance (R_DS(on) = 0.28Ω).
- Suitable for high-voltage switching (e.g., power supplies, motor drives).
Concise and functional for power applications.

Package

The STB18NM80 is a power MOSFET housed in a TO-263 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications. It features a tab for heat dissipation, making it suitable for demanding environments. The TO-263 package is robust and widely used in automotive, industrial, and power supply designs.