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STD1NK80ZT4
+BOMMOSFET N-CH 800V 1A DPAK
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STD1NK80ZT4
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데이터시트 STD1NK80ZT4 DataSheet
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패키지 TO-252-3
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재고7108
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 16Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 160 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
개요
Description
This component is a part of the N-channel MOSFET family, featuring a high drain-source voltage capability, typically up to 800 volts. It offers low on-state resistance, enabling efficient power management and reduced energy loss, which is crucial for high-performance applications. The device is commonly used in power supplies, lighting systems, and various industrial electronics due to its robust design and reliability.
The "ZT4" suffix often relates to specific packaging or additional features, such as enhanced thermal performance or compliance with certain environmental standards. The STD1NK80ZT4's design makes it suitable for use in demanding industrial environments, where efficiency and reliability are paramount.
Equivalent
1. IRF840 by Infineon Technologies.
2. FQP2N80 by ON Semiconductor.
3. NTE2394 by NTE Electronics.
Ensure to verify the specifications such as voltage, current, and package type to ensure compatibility, as there may be slight differences in performance characteristics.
Features
1. N-channel MOSFET: This device is an N-channel enhancement-mode MOSFET, suitable for high-efficiency power switching.
2. VDSS: It has a drain-to-source breakdown voltage of 800V, making it suitable for high-voltage applications.
3. RDS(on): The on-state resistance is typically low, reducing power loss during conduction.
4. ID: It can handle a continuous drain current, typically within the 1-2A range, depending on the specific package and thermal conditions.
5. Fast Switching: The MOSFET is designed for fast switching, which improves efficiency in applications like power supplies and converters.
6. TO-92 Package: This model comes in a compact TO-92 package, making it suitable for space-constrained designs.
7. Applications: It is often used in applications like lighting, power converters, and motor controls due to its high voltage capability and efficiency.
These features make the STD1NK80ZT4 a reliable choice for various high-voltage electronic applications.
Pinout
1. Gate (G): This pin receives the input control voltage to switch the MOSFET on and off.
2. Drain (D): The drain is the terminal where the load current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which the current enters the MOSFET.
Additionally, the tab is electrically connected to the drain and is used for heat dissipation. This MOSFET is particularly noted for its high voltage capability of 800V and is designed to handle high-speed switching applications.
Manufacturer
Application
1. Power Management: Utilized in power supply circuits and converters for efficient power regulation.
2. Motor Control: Employed in driving motors for precise speed and torque control.
3. Switching Applications: Used in high-speed switching due to its fast response time.
4. LED Drivers: Facilitates efficient LED lighting control.
5. Automotive Systems: Integrated into automotive electronics for systems like ABS and power steering.
6. Telecommunication: Assists in managing power in communication devices.
Its robustness and efficiency make it suitable for both industrial and consumer electronics.