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STD3NK100Z

Name: STD3NK100Z
Rating: 4.8 (15 reviews)

+BOM

MOSFET N-CH 1000V 2.5A DPAK

제조업체ST마이크로일렉트로닉스(주)
제조업체 부품 #STD3NK100Z
데이터시트 STD3NK100Z DataSheet
패키지 TO-252-3
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	SuperMESH™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain(Id) @ 25°C	2.5A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V
Rds On(Max) @ Id Vgs	6Ohm @ 1.25A, 10V
Vgs(th)(Max) @ Id	4.5V @ 50µA
Gate Charge(Qg)(Max) @ Vgs	18 nC @ 10 V
Vgs(Max)	±30V
Input Capacitance(Ciss)(Max) @ Vds	601 pF @ 25 V
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK

개요

Description

The STD3NK100Z is an N-channel MOSFET from STMicroelectronics, designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 1000V drain-source voltage (V_DSS), suitable for robust power handling.
- Current Capacity: 3A continuous drain current (I_D).
- Low On-Resistance: 4.5Ω (typical), reducing conduction losses.
- Fast Switching: Optimized for efficiency in applications like power supplies, lighting, and motor control.
- Package: TO-92, a compact through-hole option for easy prototyping.
Ideal for offline converters, ballasts, and industrial controls, it balances performance with cost-effectiveness. Always refer to the datasheet for detailed specs and thermal considerations.

Equivalent

Equivalent products to the STD3NK100Z (N-channel MOSFET, 1000V, 3A) include:
- STP3NK100Z (similar specs, TO-220 package)
- IRFBC40 (1000V, 3.2A, TO-220)
- 2SK1317 (1000V, 3A, TO-220)
- FQPF3N100C (1000V, 3A, TO-220F)
Check datasheets for exact compatibility in your circuit.

Features

The STD3NK100Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 1000V (high-voltage capability)
- Current Rating: 3A (continuous drain current)
- Low On-Resistance (RDS(on)): 3.5Ω (typ.) @ VGS = 10V
- Fast Switching Speed: Suitable for high-efficiency applications
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves reliability in inductive loads
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, inverters, motor control, and lighting
This MOSFET is designed for high-voltage, low-power switching with efficient thermal performance.

Package

The STD3NK100Z is a N-channel MOSFET in a TO-252 (DPAK) surface-mount package. It features a 1000V drain-source voltage, 3A current rating, and low on-resistance. The TO-252 package is compact, suitable for high-power applications, and includes a thermal pad for efficient heat dissipation. Commonly used in power supplies, converters, and motor control.