사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1370 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2Pak-2 |
개요
Description
The STH13N120K5-2AG is a high-voltage N-channel Super Junction MOSFET from STMicroelectronics, designed for efficient power switching applications.
### Key Features:
- Voltage Rating: 1200V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): ~0.45Ω (typ.)
- Fast Switching: Optimized for high-frequency operation
- Low Gate Charge: Enhances efficiency
- Avalanche-Rugged: Robust against high-energy transients
### Applications:
- Switched-Mode Power Supplies (SMPS)
- Motor Drives
- Industrial & Renewable Energy Systems
### Package:
- TO-247-3 (AG) for high-power dissipation.
This MOSFET is ideal for high-voltage, high-efficiency designs requiring reliability and performance. For detailed specs, refer to the datasheet.
### Key Features:
- Voltage Rating: 1200V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): ~0.45Ω (typ.)
- Fast Switching: Optimized for high-frequency operation
- Low Gate Charge: Enhances efficiency
- Avalanche-Rugged: Robust against high-energy transients
### Applications:
- Switched-Mode Power Supplies (SMPS)
- Motor Drives
- Industrial & Renewable Energy Systems
### Package:
- TO-247-3 (AG) for high-power dissipation.
This MOSFET is ideal for high-voltage, high-efficiency designs requiring reliability and performance. For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the STH13N120K5-2AG (1200V, 13A IGBT) include:
- IRG7PH35UD1 (Infineon)
- IKW15N120T2 (Infineon)
- FGA15N120ANTD (Fairchild/ON Semi)
- HGTG11N120CND (Microsemi)
These are similar in voltage, current, and package (TO-247). Verify datasheets for exact compatibility.
- IRG7PH35UD1 (Infineon)
- IKW15N120T2 (Infineon)
- FGA15N120ANTD (Fairchild/ON Semi)
- HGTG11N120CND (Microsemi)
These are similar in voltage, current, and package (TO-247). Verify datasheets for exact compatibility.
Features
The STH13N120K5-2AG is an N-channel SiC MOSFET with the following key features:
- Voltage Rating: 1200V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 450mΩ (typ.)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency
- High Temperature Operation: Up to 175°C
- Body Diode: Integrated for reverse conduction
- Package: TO-247-3 (through-hole)
- Applications: Power supplies, EV charging, solar inverters, and industrial drives
Designed for high efficiency and reliability in demanding power electronics.
- Voltage Rating: 1200V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 450mΩ (typ.)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency
- High Temperature Operation: Up to 175°C
- Body Diode: Integrated for reverse conduction
- Package: TO-247-3 (through-hole)
- Applications: Power supplies, EV charging, solar inverters, and industrial drives
Designed for high efficiency and reliability in demanding power electronics.
Pinout
The STH13N120K5-2AG is an IGBT (Insulated Gate Bipolar Transistor) module with the following key specifications:
- Pin Count: Typically 3 pins (Gate, Collector, Emitter) for the IGBT section, but the module may include additional pins for integrated features like temperature sensing or freewheeling diodes.
- Function: Designed for high-power switching applications, featuring:
- Voltage Rating: 1200V
- Current Rating: 13A
- Low VCE(sat) for efficient conduction.
- Fast switching for motor drives, inverters, and industrial systems.
For exact pinout, refer to the datasheet as configurations may vary.
- Pin Count: Typically 3 pins (Gate, Collector, Emitter) for the IGBT section, but the module may include additional pins for integrated features like temperature sensing or freewheeling diodes.
- Function: Designed for high-power switching applications, featuring:
- Voltage Rating: 1200V
- Current Rating: 13A
- Low VCE(sat) for efficient conduction.
- Fast switching for motor drives, inverters, and industrial systems.
For exact pinout, refer to the datasheet as configurations may vary.
Manufacturer
The STH13N120K5-2AG is a power MOSFET manufactured by STMicroelectronics, a leading multinational semiconductor company.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STH13N120K5-2AG is part of their high-voltage power MOSFET lineup, designed for efficient switching applications. STMicroelectronics is known for its innovation and reliability in power electronics.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STH13N120K5-2AG is part of their high-voltage power MOSFET lineup, designed for efficient switching applications. STMicroelectronics is known for its innovation and reliability in power electronics.
Package
The STH13N120K5-2AG is a power MOSFET typically available in a TO-247 package. This package is designed for high-power applications, offering efficient thermal dissipation and robust performance. It is commonly used in switching power supplies, motor drives, and other high-voltage circuits. The TO-247 package features three leads and a large mounting tab for heat sinking.
