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STH310N10F7-6
+BOMMOSFET N-CH 100V 180A H2PAK-6
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STH310N10F7-6
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데이터시트 STH310N10F7-6 DataSheet
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사양
| 속성 | 가치 |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
개요
Description
The STH310N10F7-6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, such as power management and switch-mode power supplies. It is manufactured by STMicroelectronics, a leading semiconductor company known for its innovative electronic components.
Key features of the STH310N10F7-6 include a high current capability, low on-state resistance, and fast switching speed. These attributes make it ideal for enhancing energy efficiency and performance in electronic circuits. The device is built using advanced silicon technology, which ensures robustness and reliability under demanding conditions.
With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 310A, this MOSFET is suitable for high-power applications. Its compact, surface-mountable TO-247 package allows for efficient heat dissipation, crucial for maintaining stability and prolonging device life.
Overall, the STH310N10F7-6 offers a versatile and efficient solution for modern electronic systems requiring reliable power handling capabilities.
Key features of the STH310N10F7-6 include a high current capability, low on-state resistance, and fast switching speed. These attributes make it ideal for enhancing energy efficiency and performance in electronic circuits. The device is built using advanced silicon technology, which ensures robustness and reliability under demanding conditions.
With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 310A, this MOSFET is suitable for high-power applications. Its compact, surface-mountable TO-247 package allows for efficient heat dissipation, crucial for maintaining stability and prolonging device life.
Overall, the STH310N10F7-6 offers a versatile and efficient solution for modern electronic systems requiring reliable power handling capabilities.
Equivalent
The STH310N10F7-6 is a power MOSFET produced by STMicroelectronics. Equivalent products can be found from various manufacturers offering similar N-channel MOSFETs with comparable specifications such as voltage, current ratings, and Rds(on). Equivalent alternatives could include:
1. Infineon IPT015N10N5
2. Nexperia PSMN1R8-100BSE
3. Vishay Siliconix SIHP15N10
Always verify the datasheets to ensure compatibility in your specific application.
1. Infineon IPT015N10N5
2. Nexperia PSMN1R8-100BSE
3. Vishay Siliconix SIHP15N10
Always verify the datasheets to ensure compatibility in your specific application.
Features
The STH310N10F7-6 is a power MOSFET developed by STMicroelectronics, designed for high-performance applications. Key features of this component include:
1. N-channel MOSFET: It features an N-channel configuration, which is commonly used for high-efficiency switching applications.
2. RDS(on) Resistance: It offers low on-resistance, typically around 2.4 mΩ, which helps minimize power losses and improve efficiency.
3. Voltage and Current Ratings: The MOSFET is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current of up to 310A, making it suitable for high-power applications.
4. Enhanced Switching Performance: It includes fast switching capabilities, which contribute to reduced switching losses.
5. Package: The component is housed in a PowerFLAT 8x8 package, designed to offer excellent thermal performance and compactness.
6. Applications: It is ideal for use in automotive and industrial applications, including DC-DC converters, motor control, and power management systems.
These features make the STH310N10F7-6 a reliable choice for demanding electrical and electronic applications requiring efficient power management.
1. N-channel MOSFET: It features an N-channel configuration, which is commonly used for high-efficiency switching applications.
2. RDS(on) Resistance: It offers low on-resistance, typically around 2.4 mΩ, which helps minimize power losses and improve efficiency.
3. Voltage and Current Ratings: The MOSFET is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current of up to 310A, making it suitable for high-power applications.
4. Enhanced Switching Performance: It includes fast switching capabilities, which contribute to reduced switching losses.
5. Package: The component is housed in a PowerFLAT 8x8 package, designed to offer excellent thermal performance and compactness.
6. Applications: It is ideal for use in automotive and industrial applications, including DC-DC converters, motor control, and power management systems.
These features make the STH310N10F7-6 a reliable choice for demanding electrical and electronic applications requiring efficient power management.
Pinout
The STH310N10F7-6 is an N-channel MOSFET. It features a TO-220 package, which typically has three pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation, turning it on or off by applying the appropriate voltage.
2. Drain (D): This pin is where the main current flows out when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical configurations.
The STH310N10F7-6 is designed for high-efficiency power switching applications, providing low on-resistance and high current handling capabilities. It is commonly used in power management, motor control, and power conversion systems.
1. Gate (G): This pin is used to control the MOSFET's operation, turning it on or off by applying the appropriate voltage.
2. Drain (D): This pin is where the main current flows out when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical configurations.
The STH310N10F7-6 is designed for high-efficiency power switching applications, providing low on-resistance and high current handling capabilities. It is commonly used in power management, motor control, and power conversion systems.
Manufacturer
The STH310N10F7-6 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. Their portfolio includes discrete and analog devices, microcontrollers, sensors, and digital integrated circuits. Operating in various markets such as automotive, industrial, personal electronics, and communications equipment, STMicroelectronics caters to a broad array of applications and industries with its innovative solutions.
Application
The STH310N10F7-6 is a power MOSFET commonly used in various electronic applications due to its high efficiency and performance. Key application areas include:
1. Power Supply Units: Used in switched-mode power supplies for efficient power conversion.
2. Motor Drives: Ideal for controlling motors in industrial and automotive applications.
3. Inverters: Used in solar power inverters to convert DC to AC power.
4. Battery Management Systems: Helps in efficient battery charging and discharging.
5. Telecommunications: Used in power amplifiers and RF circuits.
Its features, like low on-resistance and fast switching, make it suitable for applications requiring high-speed and efficient power management.
1. Power Supply Units: Used in switched-mode power supplies for efficient power conversion.
2. Motor Drives: Ideal for controlling motors in industrial and automotive applications.
3. Inverters: Used in solar power inverters to convert DC to AC power.
4. Battery Management Systems: Helps in efficient battery charging and discharging.
5. Telecommunications: Used in power amplifiers and RF circuits.
Its features, like low on-resistance and fast switching, make it suitable for applications requiring high-speed and efficient power management.
Package
The STH310N10F7-6 is a MOSFET transistor from STMicroelectronics, typically packaged in a PowerFLAT 5x6 package, which is designed for high-efficiency power management applications. This package is compact and offers good thermal performance with low on-resistance.
