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STP120N4F6
+BOMMOSFET N-CH 40V 80A TO220AB
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP120N4F6
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데이터시트 STP120N4F6 DataSheet
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패키지 TO-220-3
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.3mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3850 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
The MOSFET is part of the STripFET F6 series, known for low gate charge and improved switching performance. It offers low on-resistance (R_DS(on)) which minimizes power loss and enhances efficiency. The STP120N4F6 is commonly used in power supplies, motor control circuits, and other high-current applications due to its robust performance and reliability.
Encapsulated in a TO-220 package, it provides effective heat dissipation, essential for maintaining optimal temperatures in high-power operations. Additionally, the device includes features such as fast body diode for reduced reverse recovery time, enhancing its suitability for high-frequency operations.
Equivalent
1. IRF1404 from Infineon Technologies
2. IPP120N04S4-04 from Infineon Technologies
3. FDP047AN08A0 from ON Semiconductor
4. NTP120N06 from ON Semiconductor
When selecting an equivalent, ensure that the voltage, current ratings, and package type meet your requirements. Always check the datasheets for compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 120A, providing substantial power handling capabilities.
2. Low On-Resistance: The MOSFET offers low R_DS(on), resulting in reduced power losses and increased efficiency in high-current scenarios.
3. Package: Available in a TO-220 package, it ensures effective heat dissipation, making it suitable for applications requiring thermal management.
4. High-Speed Switching: Designed for fast switching speeds, it improves overall system performance in applications such as DC-DC converters and motor drivers.
5. Rugged Design: The device is designed to withstand avalanche energy, ensuring reliability under demanding conditions.
6. Safe Operating Area (SOA): It has a robust SOA, enhancing performance under various load conditions.
The STP120N4F6 is ideal for applications requiring efficient and reliable power control, such as automotive systems, power supplies, and industrial equipment.
Pinout
1. Gate (G): This pin is used to control the MOSFET, allowing it to switch on or off.
2. Drain (D): This is the pin where the load is connected. Current flows from drain to source when the MOSFET is on.
3. Source (S): This is the pin connected to the ground or return path in the circuit.
The STP120N4F6 is an N-channel MOSFET, which means it uses electrons as charge carriers and is typically used for high-speed switching applications. It is designed to handle high voltages and currents, making it suitable for power management, motor control, and other high-power applications.
Manufacturer
Application
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Employed in motor drivers for industrial and automotive applications.
3. Solar Inverters: A key component for converting DC from solar panels to AC for grid use.
4. Battery Management Systems: Helps in efficient charging and discharging of batteries.
5. DC-DC Converters: Utilized in voltage conversion circuits for consumer electronics.
6. Telecom Equipment: Assists in managing power delivery and distribution.
Each of these applications benefits from the device's low on-resistance and high-speed switching capabilities.