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STP9NK50Z
+BOMMOSFET N-CH 500V 7.2A TO220AB
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STP9NK50Z
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데이터시트 STP9NK50Z DataSheet
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패키지 TO-220
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재고4900
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 7.2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 850mOhm @ 3.6A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 910 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Key features of the STP9NK50Z include a drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 9A at 25°C, and a low on-resistance (R_DS(on)) of 0.85 ohms, which helps minimize power loss. This MOSFET operates efficiently at high frequencies, making it suitable for use in power supplies, converters, and various industrial and consumer electronics.
The STP9NK50Z is housed in a TO-220 package, providing good thermal performance and ease of mounting. Its robust design ensures reliable operation under demanding conditions, while its fast switching speed reduces electromagnetic interference and enhances overall system efficiency.
Equivalent
1. IRF840: N-channel MOSFET by Infineon Technologies.
2. FQP9N50: N-channel MOSFET by ON Semiconductor.
3. 2SK3569: N-channel MOSFET by Toshiba.
4. FDPF9N50: N-channel MOSFET by Fairchild Semiconductor.
While these are potential substitutes, always compare specifications such as voltage, current ratings, and package types to ensure compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 9A, making it suitable for high-voltage applications.
2. R_DS(on): The on-resistance is typically low, around 0.85 ohms, which helps in efficient power management and reduced heat dissipation.
3. Fast Switching: The device offers fast switching capabilities, enhancing performance in switching power supplies and converters.
4. Package Type: Often available in a TO-220 package, which is conducive for heat dissipation and easy mounting on circuit boards.
5. Applications: It's used in power supplies, motor drivers, and other applications requiring efficient power control.
6. Temperature: It operates efficiently across a wide temperature range, typically from -55°C to 150°C.
These features make the STP9NK50Z suitable for applications requiring robust performance and efficiency in high-voltage environments.
Pinout
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, it allows current to flow between the drain and source. The gate operates with a low voltage signal to turn the MOSFET on or off.
2. Pin 2 (Drain): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is turned on. It is connected to the load in a circuit.
3. Pin 3 (Source): This pin acts as the return path for the current flowing through the drain. It is typically connected to the ground or the negative side of the power supply.
Additionally, the tab of the TO-220 package is usually connected to the drain and can be used for heat dissipation. The STP9NK50Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a drain current (I_D) of 8.5A.
Manufacturer
Application
1. Switching Power Supplies: Utilized in designing efficient power converters for various electronic devices.
2. Motor Drives: Used in controlling motors in industrial and consumer applications.
3. Lighting Systems: Employed in electronically controlled lighting solutions.
4. UPS Systems: Plays a role in power backup systems for seamless energy delivery.
5. Inverters: Integral in solar inverters and other renewable energy systems.
6. Battery Management: Helps in efficient charge and discharge cycles in battery-operated devices.
Its robust performance makes it suitable for high-frequency and high-efficiency applications.