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STW15NK90Z
+BOMMOSFET N-CH 900V 15A TO247-3
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STW15NK90Z
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데이터시트 STW15NK90Z DataSheet
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패키지 TO-247
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 550mOhm @ 7.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 256 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6100 pF @ 25 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
Additionally, the STW15NK90Z is equipped with a fast switching speed, which is ideal for applications requiring quick transitions, such as power supplies, motor drives, and other industrial or consumer electronics. The device also features built-in Zener protection, providing enhanced reliability against voltage spikes and transients. It is typically housed in a TO-247 package, which offers efficient thermal management and ease of mounting. Overall, the STW15NK90Z is valued for its robustness, efficiency, and adaptability in various high-voltage power applications.
Equivalent
1. IRFB20N50K by Infineon Technologies: Similar voltage and current ratings.
2. FQA19N60C by ON Semiconductor: Comparable specifications.
3. TK15A90D by Toshiba: Offers similar performance metrics.
4. APT5020B2FLL by Microsemi: Close in terms of voltage and current capacity.
Always check the datasheets for specific parameters to ensure compatibility in your application.
Features
1. Drain-Source Voltage (Vds): Rated at 900V, allowing it to handle high voltage applications.
2. Continuous Drain Current (Id): Can handle up to 15A, suitable for high current operations.
3. Rds(on): Has a low on-resistance, typically around 0.34 ohms, which reduces power losses.
4. Threshold Voltage (Vgs(th)): Typically ranges from 3.0V to 5.5V.
5. Total Gate Charge (Qg): Approximately 63 nC, which affects switching speed.
6. Power Dissipation: Capable of dissipating up to 250W, making it efficient in transferring power.
7. Package Type: Comes in a TO-247 package, offering good thermal performance.
8. Temperature Range: Operates effectively in a wide range from -55°C to 150°C.
9. Fast Switching: Designed for quick response times, enhancing efficiency in dynamic environments.
These features make it suitable for applications such as power supplies, converters, and motor control systems.
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the 'on' state. It is the terminal through which the load current passes.
3. Source (S): The source is the terminal through which the current enters the MOSFET. In the 'off' state, it is used to reference the gate voltage.
This MOSFET is used in various applications such as power supplies, converters, and switching circuits due to its high voltage capability and efficiency.
Manufacturer
Application
1. Switching Power Supplies: Utilized for efficient power conversion.
2. Motor Drives: Employed in control circuits for driving motors.
3. Lighting Systems: Used in electronic ballast circuits for lighting.
4. Inverters: Suitable for use in DC-AC inverter designs.
5. Industrial Equipment: Applied in high-voltage industrial machinery for enhanced performance.
Its robustness and thermal performance make it suitable for demanding environments in both consumer electronics and industrial applications.